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SN74ALS2967JD

Texas Instruments

SN74ALS2967JD by Texas Instruments

SN74ALS2967JD by Texas Instruments is a Memory Controller with 18-bit Address Bus, 1M X 16 Memory Organization, and 5V Nominal Voltage. It is ideal for DRAM applications, operates b/w 0-70 °C, and has a max supply current of 200 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,266 parts In-Stock

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3,266

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Digiode

USA . 751 parts In-Stock

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751

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Distributors (Availability)

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AZTECH Wire

Italy . 578 parts In-Stock

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$9.322

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578

$9.322

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Corohmni

South Africa . 899 parts In-Stock

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$15.354

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$15.354

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One Stop Electronics

USA . 486 parts In-Stock

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$30.000

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486

$30.000

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Parana Technologies

USA . 890 parts In-Stock

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$48.391

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890

$48.391

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DigiPath Technology Company

USA . 1,858 parts In-Stock

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$53.285

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1,858

$53.285

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ChromeModa Solutions

Germany . 5,139 parts In-Stock

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$54.372

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$44.585

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$54.372

$44.585

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IDEA Electronic Components Group

UK . 1,663 parts In-Stock

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$54.372

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$51.653

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$48.935

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$48.935

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Corphita

USA . 3,544 parts In-Stock

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Overview

Elevate your memory controller experience with the SN74ALS2967JD by Texas Instruments. Crafted with precision and quality, this product offers unparalleled reliability and performance in managing DRAM memory. Ideal for a wide range of applications, this memory controller boasts a robust design with a focus on efficiency and seamless operation. Trust in Texas Instruments to deliver cutting-edge technology that enhances your system's capabilities. Discover the value and benefits this product brings to your projects today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials ensures a durable and long-lasting construction, making this product reliable and robust.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this memory controller can handle higher voltage inputs, providing flexibility and compatibility with various systems.

Address Bus Width: 18

An address bus width of 18 allows for efficient and high-speed data transfer, enhancing the performance of the memory controller.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of installation and space-saving design, making it suitable for compact devices or systems.

Power Supplies (V): 5

Operating at a standard power supply of 5V ensures compatibility with common power sources, making integration easier.

No. of Terminals: 48

The high number of terminals (48) provides ample connectivity options, enabling the memory controller to support multiple connections and peripherals.

Package Style (Meter): IN-LINE

The in-line package style offers a straightforward and organized layout, simplifying the installation process and ensuring a neat appearance in the system.

Minimum Supply Voltage: 4.5 V

With a minimum supply voltage of 4.5V, the memory controller can operate efficiently even at lower power levels, conserving energy and reducing heat generation.

Maximum Operating Temperature: 70 °C

The memory controller can withstand high operating temperatures up to 70°C, ensuring reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this memory controller is suitable for use in various temperature ranges, making it versatile and adaptable.

Terminal Position: DUAL

The dual terminal position provides redundancy and ensures a secure connection, minimizing the risk of signal loss or disconnection.

Temperature Grade: COMMERCIAL

Designed for commercial applications, this memory controller meets industry standards and specifications, guaranteeing reliable performance in business environments.

Peripheral IC Type: MEMORY CONTROLLER, DRAM

Equipped with a memory controller for dynamic random-access memory (DRAM), this product offers efficient memory management and data processing capabilities.

Technology: TTL

Based on transistor-transistor logic (TTL) technology, this memory controller ensures high-speed data transfer and compatibility with TTL-compatible devices.

Terminal Form: THROUGH-HOLE

Featuring a through-hole terminal form, this memory controller offers secure and stable connections, suitable for applications that require robust mounting.

Maximum Supply Current: 200 mA

With a maximum supply current of 200mA, this memory controller operates efficiently while consuming minimal power, reducing energy costs and heat generation.

Nominal Supply Voltage: 5 V

Operating at a nominal supply voltage of 5V ensures stable performance and compatibility with standard power sources, making it a reliable choice for various systems.

Memory Organization: 1M X 16

Featuring a memory organization of 1M X 16, this memory controller offers a high density of memory storage and efficient data retrieval, enhancing system performance.

No. of Banks: 4

With four banks available, the memory controller can efficiently manage data storage and retrieval tasks in parallel, improving overall system efficiency.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm allows for ease of integration and compatibility with common connectors, ensuring a hassle-free installation process.

Technical Specifications

Memory Controllers SN74ALS2967JD attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

18

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-CDIP-T48

Low Power Mode:

NO

Memory Organization:

1M X 16

No. of Banks:

4

No. of Terminals:

48

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP48,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Memory Controllers

Maximum Supply Current:

200 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

SN74ALS2967JD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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