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SN74ACT4503FK

Texas Instruments

SN74ACT4503FK by Texas Instruments

SN74ACT4503FK by Texas Instruments is a memory controller IC with 20-bit address bus width, 5V nominal voltage, and 50mA max supply current. It is used in DRAM applications, featuring CMOS technology and a ceramic/metal-sealed co-fired package for commercial-grade temperature range operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,712 parts In-Stock

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Digiode

USA . 2,331 parts In-Stock

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2,331

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Distributors (Availability)

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AZTECH Wire

Italy . 861 parts In-Stock

1+ parts

$19.168

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861

$19.168

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One Stop Electronics

USA . 458 parts In-Stock

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$25.000

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458

$25.000

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Parana Technologies

USA . 1,995 parts In-Stock

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$43.663

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$43.663

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DigiPath Technology Company

USA . 1,283 parts In-Stock

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$48.079

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$44.232

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1,283

$48.079

$44.232

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IDEA Electronic Components Group

UK . 1,596 parts In-Stock

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$49.060

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$46.607

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$44.154

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1,596

$49.060

$46.607

$44.154

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ChromeModa Solutions

Germany . 1,239 parts In-Stock

1+ parts

$49.060

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$40.229

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1,239

$49.060

$40.229

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Corohmni

South Africa . 320 parts In-Stock

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$83.848

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Corphita

USA . 4,586 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the SN74ACT4503FK by Texas Instruments, a high-quality memory controller that sets new standards in performance and reliability. Manufactured by Texas Instruments, a leader in the industry known for their superior products, this chip carrier package offers unmatched value and benefits to customers. Ideal for a wide range of applications, this memory controller provides seamless integration and efficient operation. Elevate your projects with the SN74ACT4503FK and experience the advantages of top-of-the-line technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co fired package body material provides excellent durability and resilience, making this memory controller suitable for use in a variety of environments.

Address Bus Width: 20

With a 20-bit address bus width, this memory controller supports a large memory address space, allowing for efficient data handling and storage.

Power Supplies (V): 5

Operating at a 5V power supply, this memory controller ensures stable and reliable performance while maintaining energy efficiency.

No. of Terminals: 68

Having 68 terminals allows for seamless connectivity and integration with other components, making this memory controller versatile and easy to use in various systems.

Technology: CMOS

Utilizing CMOS technology, this memory controller offers low power consumption and high speed operation, making it an efficient and reliable choice for memory management tasks.

Technical Specifications

Memory Controllers SN74ACT4503FK attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

20

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

S-CQCC-N68

Length:

24.13 mm

Low Power Mode:

NO

No. of Banks:

4

No. of Terminals:

68

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC68(UNSPEC)

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

Memory Controllers

Maximum Supply Current:

50 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

24.13 mm

Peripheral IC Type:

Trade Compliance

SN74ACT4503FK Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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