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SN74ALS6302N

Texas Instruments

SN74ALS6302N by Texas Instruments

SN74ALS6302N by Texas Instruments is a Memory Controller with 20-bit Address Bus, 1M X 16 Memory Organization, and operates at 5V. It is used in DRAM applications for commercial-grade temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,312 parts In-Stock

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Digiode

USA . 1,777 parts In-Stock

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1,777

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Distributors (Availability)

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AZTECH Wire

Italy . 250 parts In-Stock

1+ parts

$10.066

100+ parts

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250

$10.066

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One Stop Electronics

USA . 481 parts In-Stock

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$29.000

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481

$29.000

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Corohmni

South Africa . 2,940 parts In-Stock

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$34.836

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$34.836

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Parana Technologies

USA . 2,378 parts In-Stock

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$61.729

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2,378

$61.729

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DigiPath Technology Company

USA . 1,355 parts In-Stock

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$67.971

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$62.533

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1,355

$67.971

$62.533

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ChromeModa Solutions

Germany . 3,504 parts In-Stock

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$69.358

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$56.874

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3,504

$69.358

$56.874

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IDEA Electronic Components Group

UK . 804 parts In-Stock

1+ parts

$69.358

100+ parts

$65.890

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$62.422

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804

$69.358

$65.890

$62.422

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Corphita

USA . 4,704 parts In-Stock

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Overview

Unlock the power of efficient memory control with the SN74ALS6302N by Texas Instruments. Designed with quality and reliability in mind, this memory controller offers unparalleled performance and versatility for a wide range of applications. Whether you're looking to enhance your system's memory capabilities or improve overall efficiency, this product delivers exceptional value and benefits. Trust in Texas Instruments' reputation for excellence and experience the advantages of the SN74ALS6302N in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Maximum Supply Voltage: 5.5 V

High maximum supply voltage ensures compatibility with a wide range of systems and devices.

Address Bus Width: 20

Wide address bus width allows for efficient data transfer and access to large memory spaces.

Power Supplies (V): 5

Stable power supply of 5V ensures reliable performance and operation of the memory controller.

No. of Terminals: 52

Higher number of terminals provide more connectivity options and flexibility in circuit design.

Minimum Operating Temperature: 0 °C

Wide temperature range from 0°C ensures the memory controller can operate in various environments.

Memory Organization: 1M X 16

Efficient memory organization of 1M x 16 allows for high capacity and speed in data storage and access.

No. of Banks: 4

Having 4 banks increases the memory controller's capability to handle multiple tasks simultaneously, improving overall performance.

Technical Specifications

Memory Controllers SN74ALS6302N attributes and parameters. Explore more Memory Controllers devices from Texas Instruments

Specs

Address Bus Width:

20

Boundary Scan:

NO

External Data Bus Width:

0

JESD-30 Code:

R-PDIP-T52

Length:

66.55 mm

Low Power Mode:

NO

Memory Organization:

1M X 16

No. of Banks:

4

No. of Terminals:

52

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP52,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Memory Controllers

Maximum Supply Current:

220 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Peripheral IC Type:

Trade Compliance

SN74ALS6302N Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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