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DRA786BDGABFQ1

Texas Instruments

DRA786BDGABFQ1 by Texas Instruments

DRA786BDGABFQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at up to 32 MHz, compatible with CAN, I2C, SPI, and UART buses. Ideal for automotive applications due to AEC-Q100 screening and wide temperature range (-40 to 125 °C).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,563 parts In-Stock

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Digiode

USA . 866 parts In-Stock

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AZTECH Wire

Italy . 722 parts In-Stock

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$8.436

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722

$8.436

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Native Components

USA . 447 parts In-Stock

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$11.110

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447

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Northwest PG Solutions

USA . 1,048 parts In-Stock

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$12.221

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$10.999

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Parana Technologies

USA . 1,051 parts In-Stock

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$15.495

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$15.872

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1,051

$15.495

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One Stop Electronics

USA . 457 parts In-Stock

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$17.000

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457

$17.000

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ChromeModa Solutions

Germany . 5,222 parts In-Stock

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$17.410

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$14.276

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$17.410

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IDEA Electronic Components Group

UK . 763 parts In-Stock

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$17.410

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$16.540

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$15.669

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763

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Corohmni

South Africa . 155 parts In-Stock

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$56.826

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Corphita

USA . 2,790 parts In-Stock

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Microchip USA

USA . 2,602 parts In-Stock

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DigiPath Technology Company

USA . 2,106 parts In-Stock

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$15.697

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$15.697

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Overview

Elevate your automotive electronics with the DRA786BDGABFQ1 by Texas Instruments. This high-quality microprocessor circuit offers unmatched performance and reliability, thanks to its cutting-edge CMOS technology and AEC-Q100 screening level. With a wide range of bus compatibility including CAN, I2C, SPI, and UART, this peripheral IC is perfect for a variety of applications. Experience seamless integration, superior functionality, and exceptional value with the DRA786BDGABFQ1. Drive innovation and elevate your projects with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

Surface Mount: YES

Easily mountable on circuit boards for convenient installation.

Maximum Supply Voltage: 1.11 V

Efficient power consumption for optimized energy usage.

Screening Level: AEC-Q100

Meets automotive industry quality standards for reliability and durability.

No. of Terminals: 367

High number of terminals for versatile connectivity options.

Minimum Operating Temperature: -40 °C

Suitable for harsh operating environments with low temperatures.

Maximum Clock Frequency: 32 MHz

High clock frequency for fast processing speeds.

Technology: CMOS

Built using CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA786BDGABFQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA786BDGABFQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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