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DRA785BSGABFRQ1

Texas Instruments

DRA785BSGABFRQ1 by Texas Instruments

The Texas Instruments DRA785BSGABFRQ1 is a MICROPROCESSOR CIRCUIT with 32-bit External Data Bus Width and 32 MHz Clock Frequency. Ideal for automotive applications, it operates b/w -40 to 125 °C with a supply voltage range of 1.02-1.11 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,271 parts In-Stock

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Digiode

USA . 4,302 parts In-Stock

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4,302

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Distributors (Availability)

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AZTECH Wire

Italy . 729 parts In-Stock

1+ parts

$14.255

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729

$14.255

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One Stop Electronics

USA . 674 parts In-Stock

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$32.000

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674

$32.000

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Corohmni

South Africa . 5,156 parts In-Stock

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$69.015

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$69.015

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Parana Technologies

USA . 576 parts In-Stock

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$72.264

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576

$72.264

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DigiPath Technology Company

USA . 2,281 parts In-Stock

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$79.572

100+ parts

$73.206

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2,281

$79.572

$73.206

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ChromeModa Solutions

Germany . 5,226 parts In-Stock

1+ parts

$81.196

100+ parts

$66.581

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5,226

$81.196

$66.581

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IDEA Electronic Components Group

UK . 697 parts In-Stock

1+ parts

$81.196

100+ parts

$77.136

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$73.076

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697

$81.196

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$73.076

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Microchip USA

USA . 1,162 parts In-Stock

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Northwest PG Solutions

USA . 948 parts In-Stock

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$4.528

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$4.528

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Corphita

USA . 160 parts In-Stock

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Native Components

USA . 154 parts In-Stock

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$4.481

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154

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Overview

Discover the cutting-edge DRA785BSGABFRQ1 by Texas Instruments, a top-of-the-line MICROPROCESSOR CIRCUIT designed for automotive applications. With advanced CMOS technology and AEC-Q100 screening, this device guarantees reliability and durability. Its compact GRID ARRAY package with 367 terminals ensures seamless integration, while its wide compatibility with I2C, SPI, and UART offers flexibility. Trust in Texas Instruments' reputation for excellence and elevate your automotive electronics with the DRA785BSGABFRQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external elements, making the product suitable for harsh environments.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 1.11 V

High maximum supply voltage ensures compatibility with a wide range of power sources, offering flexibility in application.

Screening Level: AEC-Q100

AEC-Q100 screening level indicates automotive-grade quality, ensuring reliability and performance in automotive applications.

Package Shape: SQUARE

Square package shape helps in efficient layout and utilization of space on the circuit board, improving overall design aesthetics.

No. of Terminals: 367

Large number of terminals enable connectivity with various external components, expanding the functionality and versatility of the product.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array fine pitch package style allows for high density mounting, optimizing space utilization and enhancing overall system performance.

Minimum Supply Voltage: 1.02 V

Low minimum supply voltage helps in reducing power consumption and improving energy efficiency, making the product cost-effective.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability and stability in extreme operating conditions, making the product suitable for industrial or automotive use.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for operation in both hot and cold environments, increasing the product's versatility and usability.

Terminal Finish: TIN SILVER COPPER

Terminal finish of tin silver copper provides excellent conductivity and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier placement and soldering during assembly, simplifying the manufacturing process and reducing production time.

Maximum Seated Height: 2.82 mm

Low maximum seated height allows for compact and slim designs, saving space and enabling integration into smaller form factor devices.

Width: 15 mm

Moderate width dimension offers a balance between space efficiency and component accessibility, making the product suitable for various board layouts.

External Data Bus Width: 32

Wide external data bus width of 32 bits enables high-speed data transfer and processing, enhancing the product's performance and efficiency.

Maximum Clock Frequency: 32 MHz

High maximum clock frequency of 32 MHz supports fast data processing and real-time operation, making the product ideal for time-critical applications.

Maximum Time At Peak Reflow Temperature (s): 30

Maximum time at peak reflow temperature of 30 seconds ensures proper soldering and component attachment, guaranteeing reliable electrical connections.

Peak Reflow Temperature °C: 250

High peak reflow temperature of 250°C allows for secure and durable solder joints, ensuring long-term stability and performance of the product.

Length: 15 mm

Moderate length dimension provides a good balance between functionality and space efficiency, making the product versatile and adaptable to various design requirements.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade certification ensures reliability and performance in harsh operating conditions, making the product suitable for automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Inclusion of a microprocessor circuit as a peripheral IC type enhances processing capabilities and functionality, enabling advanced system control and performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving energy efficiency and signal integrity in the product.

Terminal Form: BALL

Ball terminal form provides reliable and secure connections, ensuring stable electrical contact and long-term performance of the product.

Nominal Supply Voltage: 1.06 V

Stable nominal supply voltage of 1.06 V ensures consistent and reliable operation, reducing the risk of voltage fluctuations and system failures.

Bus Compatibility: I2C(2), SPI(4), UART(3)

Compatibility with I2C, SPI, and UART bus interfaces allows for easy integration with various communication protocols and devices, enhancing the product's connectivity and versatility.

Terminal Pitch: 0.65 mm

Fine terminal pitch of 0.65 mm enables high-density mounting and improves signal routing efficiency, enhancing overall system performance and reliability.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level of 3 indicates moderate sensitivity to moisture, prompting proper handling and storage to prevent damage and ensure product longevity.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA785BSGABFRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

I2C(2), SPI(4), UART(3),

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

32

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA167,22X22,26

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA785BSGABFRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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