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AM3892BCYG120

Texas Instruments

AM3892BCYG120 by Texas Instruments

MICROPROCESSOR, RISC; Terminal Form: BALL; No. of Terminals: 1031; Package Code: FBGA; Package Shape: SQUARE; Address Bus Width: 16;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,818 parts In-Stock

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Digiode

USA . 2,965 parts In-Stock

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A2Z Electronics, Inc.

USA . 692 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 311 parts In-Stock

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$7.435

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311

$7.435

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Ampacity Inc.

Singapore . 736 parts In-Stock

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$12.000

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One Stop Electronics

USA . 286 parts In-Stock

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$21.000

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Parana Technologies

USA . 785 parts In-Stock

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$40.247

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$40.247

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DigiPath Technology Company

USA . 1,184 parts In-Stock

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$44.317

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$44.317

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ChromeModa Solutions

Germany . 5,224 parts In-Stock

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$45.221

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$37.081

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$45.221

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IDEA Electronic Components Group

UK . 2,066 parts In-Stock

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$45.221

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$42.960

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$40.699

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2,066

$45.221

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$40.699

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Lixinc

USA . 19,388 parts In-Stock

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Corphita

USA . 2,267 parts In-Stock

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Northwest PG Solutions

USA . 1,229 parts In-Stock

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Native Components

USA . 539 parts In-Stock

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539

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Microchip USA

USA . 331 parts In-Stock

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Technical Specifications

Microprocessors AM3892BCYG120 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

27 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B1031

JESD-609 Code:

e1

Length:

25 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA1031,37X37,25

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

1

Qualification:

Not Qualified

Maximum Seated Height:

3.31 mm

Speed:

1200 rpm

Sub-Category:

Microprocessors

Maximum Supply Voltage:

1.05 V

Minimum Supply Voltage:

.95 V

Nominal Supply Voltage:

1 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

25 mm

Peripheral IC Type:

Trade Compliance

AM3892BCYG120 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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