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AM3871BCYE80

Texas Instruments

AM3871BCYE80 by Texas Instruments

The Texas Instruments AM3871BCYE80 microprocessor features 32-bit architecture, 16-bit address and data bus width, with a clock frequency of up to 30 MHz. It is designed for low power applications with a supply voltage range of 0.95-1.35 V, integrated cache memory, and boundary scan capability. Ideal for use in embedded systems requiring high-speed processing in compact form factors.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 3,198 parts In-Stock

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Vyrian

USA . 2,690 parts In-Stock

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AZTECH Wire

Italy . 447 parts In-Stock

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$10.230

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One Stop Electronics

USA . 913 parts In-Stock

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$16.000

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Parana Technologies

USA . 611 parts In-Stock

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$32.749

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$3,041.272

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$29.474

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611

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DigiPath Technology Company

USA . 2,343 parts In-Stock

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$36.061

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ChromeModa Solutions

Germany . 5,060 parts In-Stock

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$36.797

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$30.174

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$36.797

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IDEA Electronic Components Group

UK . 2,006 parts In-Stock

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$36.797

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$34.957

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$33.117

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Corphita

USA . 4,502 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Experience the unparalleled power and efficiency of the AM3871BCYE80 by Texas Instruments, a cutting-edge microprocessor that delivers superior performance for a wide range of applications. Manufactured with precision and expertise, this processor boasts integrated cache, surface mount capability, and a high clock frequency of 30 MHz. With its advanced technology and low power mode, this processor is ideal for demanding tasks in industries such as automotive, industrial automation, and telecommunications. Trust Texas Instruments to provide you with top-quality products that offer unmatched value and reliability. Elevate your projects with the AM3871BCYE80 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microprocessor, ensuring a longer product life.

Integrated Cache: YES

Having integrated cache helps improve the performance of the microprocessor by reducing memory access times.

Maximum Supply Voltage: 1.42 V

With a higher maximum supply voltage, the microprocessor has the capability to handle higher power demands when necessary.

Address Bus Width: 16

A wider address bus allows for faster communication between components, enhancing overall system performance.

Package Shape: SQUARE

A square package shape makes it easier to mount and fit the microprocessor within a system layout.

Bit Size: 32

A higher bit size means the microprocessor can handle more data at once, increasing processing speeds.

Power Supplies (V): 0.95/1.35

Having a range of power supply options allows for flexibility in different system configurations.

No. of Terminals: 684

A higher number of terminals provide more connection points, enabling the microprocessor to communicate with other components effectively.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array with fine pitch style helps optimize space utilization and enhances electrical performance.

Minimum Supply Voltage: 1.28 V

A lower minimum supply voltage can help reduce power consumption and promote energy efficiency.

Terminal Position: BOTTOM

Having terminals at the bottom allows for easy and secure connections within the system.

Maximum Seated Height: 3.06 mm

A relatively low maximum seated height can help with compact system designs and efficient thermal management.

Width: 23 mm

A moderate width allows for easy integration into a variety of system configurations.

Boundary Scan: YES

Boundary scan capability simplifies testing and debugging processes during production and maintenance.

External Data Bus Width: 16

Matching the address bus width, the external data bus width ensures efficient data transfer and processing.

Maximum Clock Frequency: 30 MHz

A higher maximum clock frequency indicates the microprocessor's capability to handle more complex tasks at faster speeds.

Length: 23 mm

A moderate length contributes to overall system flexibility and ease of integration.

Peripheral IC Type: MICROPROCESSOR

Being specifically designed as a microprocessor ensures optimized performance for processing tasks.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various system designs.

Terminal Form: BALL

Ball terminals provide secure connections and efficient heat dissipation, enhancing overall reliability.

Nominal Supply Voltage: 1.35 V

A stable nominal supply voltage ensures consistent performance and reliable operation.

Terminal Pitch: 0.8 mm

Having a small terminal pitch enables high-density packaging and efficient signal transmission.

Format: FLOATING POINT

Supporting floating-point calculations, this format allows for enhanced precision in mathematical operations.

Speed: 800 rpm

With a speed of 800 rpm, the microprocessor can efficiently process tasks at a consistent and reliable rate.

Low Power Mode: YES

Enabling a low power mode helps conserve energy and reduce heat generation, promoting system efficiency.

Technical Specifications

Microprocessors AM3871BCYE80 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B684

Length:

23 mm

Low Power Mode:

YES

No. of Terminals:

684

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA684,28X28,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

0.95/1.35

Qualification:

Not Qualified

Maximum Seated Height:

3.06 mm

Speed:

800 rpm

Sub-Category:

Microprocessors

Maximum Supply Voltage:

1.42 V

Minimum Supply Voltage:

1.28 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

23 mm

Peripheral IC Type:

Trade Compliance

AM3871BCYE80 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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