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AM3874BCYEA80

Texas Instruments

AM3874BCYEA80 by Texas Instruments

The Texas Instruments AM3874BCYEA80 is a 32-bit microprocessor with integrated cache, operating at a max clock frequency of 30 MHz. It features an address bus width of 16 bits and external data bus width of 16 bits. This CMOS technology-based processor is suitable for applications requiring low power mode and boundary scan capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,582 parts In-Stock

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Vyrian

USA . 2,605 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 491 parts In-Stock

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$1.654

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491

$1.654

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Northwest PG Solutions

USA . 2,119 parts In-Stock

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$1.820

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$1.820

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AZTECH Wire

Italy . 257 parts In-Stock

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$14.799

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$14.799

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One Stop Electronics

USA . 537 parts In-Stock

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$18.000

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537

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Parana Technologies

USA . 609 parts In-Stock

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$65.708

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609

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DigiPath Technology Company

USA . 933 parts In-Stock

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$72.352

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IDEA Electronic Components Group

UK . 933 parts In-Stock

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$73.829

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$70.138

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$66.446

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933

$73.829

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ChromeModa Solutions

Germany . 383 parts In-Stock

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$73.829

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$60.540

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Corphita

USA . 1,016 parts In-Stock

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Overview

Elevate your products with the AM3874BCYEA80 by Texas Instruments. As a leader in microprocessor technology, Texas Instruments delivers unparalleled quality and reliability. This versatile microprocessor is perfect for a wide range of applications, offering seamless integration and outstanding performance. With integrated cache, low power mode, and maximum clock frequency of 30 MHz, this product provides exceptional value and benefits to customers seeking cutting-edge technology. Trust Texas Instruments to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and reliable for long-term use.

Integrated Cache: YES

Integrated cache helps in improving the overall performance and speed of the microprocessor.

Surface Mount: YES

Surface mount capability makes it easy to install and solder the microprocessor onto a circuit board.

Maximum Supply Voltage: 1.42 V

Higher maximum supply voltage allows for better power handling and stability.

Address Bus Width: 16

A wider address bus width enables the microprocessor to access a larger memory space efficiently.

Package Shape: SQUARE

Square shape allows for easy mounting and integration into various electronic devices.

Bit Size: 32

A larger bit size of 32 enhances the processing capability and performance of the microprocessor.

Power Supplies (V): 0.95/1.35

Multiple power supply options provide flexibility in different operating conditions.

No. of Terminals: 684

Higher number of terminals allow for more connectivity options and functionalities.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array, fine pitch package style offers compact design and efficient heat dissipation.

Minimum Supply Voltage: 1.28 V

Lower minimum supply voltage helps in reducing power consumption and heat generation.

Terminal Position: BOTTOM

Bottom terminal position makes it easier for soldering and connecting the microprocessor.

Maximum Seated Height: 3.06 mm

Low maximum seated height allows for slim and compact device designs.

Width: 23 mm

Optimal width size for compatibility with various circuit board layouts.

Boundary Scan: YES

Boundary scan feature allows for easy testing and debugging of the microprocessor.

External Data Bus Width: 16

Matching external data bus width with address bus enhances data transfer efficiency.

Maximum Clock Frequency: 30 MHz

Higher maximum clock frequency enables faster processing speed and real-time performance.

Length: 23 mm

Ideal length size for compact and space-efficient device designs.

Peripheral IC Type: MICROPROCESSOR

Designed specifically as a microprocessor for optimized computing tasks and operations.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance.

Terminal Form: BALL

Ball terminal form offers secure and reliable connections for stable operation.

Nominal Supply Voltage: 1.35 V

Optimal nominal supply voltage for efficient and stable performance.

Terminal Pitch: 0.8 mm

Fine terminal pitch allows for compact design and high-density integration.

Format: FLOATING POINT

Floating point format is suitable for complex mathematical calculations and precision tasks.

Speed: 800 rpm

High speed of 800 rpm allows for quick data processing and efficient task execution.

Low Power Mode: YES

Low power mode feature helps in conserving energy and reducing overall power consumption.

Technical Specifications

Microprocessors AM3874BCYEA80 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

16

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B684

Length:

23 mm

Low Power Mode:

YES

No. of Terminals:

684

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA684,28X28,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

0.95/1.35

Qualification:

Not Qualified

Maximum Seated Height:

3.06 mm

Speed:

800 rpm

Sub-Category:

Microprocessors

Maximum Supply Voltage:

1.42 V

Minimum Supply Voltage:

1.28 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

23 mm

Peripheral IC Type:

Trade Compliance

AM3874BCYEA80 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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