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M28W160B150GJ6T

STMicroelectronics

M28W160B150GJ6T by STMicroelectronics

M28W160B150GJ6T from STMicroelectronics is a NOR Flash memory with a 16Mbit density, operating at 3V. It features a max access time of 150ns and supports industrial temp ranges (-40 °C to 85°C). Ideal for asynchronous applications in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,730 parts In-Stock

1+ parts

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4,730

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Anansix

USA . 2,107 parts In-Stock

1+ parts

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2,107

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Vyrian

USA . 1,606 parts In-Stock

1+ parts

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1,606

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,938 parts In-Stock

1+ parts

$2.417

100+ parts

-

1k+ parts

$2.175

10k+ parts

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1,938

$2.417

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$2.175

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MKK Technologies

India . 1,073 parts In-Stock

1+ parts

$4.545

100+ parts

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10k+ parts

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1,073

$4.545

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DigiPath Technology Company

USA . 1,073 parts In-Stock

1+ parts

$4.545

100+ parts

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10k+ parts

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1,073

$4.545

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Corphita

USA . 4,449 parts In-Stock

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4,449

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Parana Technologies

USA . 796 parts In-Stock

1+ parts

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100+ parts

$2.890

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796

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$2.890

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Overview

Unlock unparalleled performance with the M28W160B150GJ6T Flash Memory from STMicroelectronics. Renowned for their industry-leading quality and innovation, STMicroelectronics offers this high-density, reliable memory solution designed for diverse applications—from automotive to industrial systems. With robust temperature ranges and effortless integration, this NOR Flash ensures that your devices operate smoothly and efficiently, delivering exceptional value and performance you can trust. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection against environmental factors, enhancing the reliability of the memory module.

Surface Mount: YES

Surface mount technology allows for compact design and reduced PCB space, making it ideal for modern electronics applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout and space within electronic devices, facilitating efficient integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster and more flexible data access, enhancing system performance in various applications.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V is commonly used in many devices, ensuring compatibility and easy integration.

No. of Terminals: 46

With 46 terminals, this product supports a wide range of functionalities and connections, making it versatile for complex systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The thin profile and fine pitch design enable high-density mounting on PCBs, saving space in compact electronics.

Maximum Operating Temperature: 85 °C

The capability to operate up to 85 °C allows this memory to withstand high-temperature environments, ensuring reliable performance in industrial applications.

Organization: 1MX16

This memory organization provides efficient storage access and management, optimizing the performance of data-heavy applications.

Minimum Operating Temperature: -40 °C

Operating reliably at -40 °C makes this memory suitable for extreme environmental conditions, ideal for industrial and automotive applications.

Terminal Position: BOTTOM

Bottom terminal positioning ensures efficient connection to the PCB, promoting better electrical performance and thermal management.

Maximum Seated Height: 0.865 mm

A low seated height contributes to a compact design, making it ideal for slim devices where space is a premium.

Width: 6.858 mm

The compact width allows for high-density arrangements on PCBs, maximizing functionality in smaller devices.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7 V ensures compatibility with a wide array of devices that operate within this voltage range.

Type: NOR TYPE

NOR type flash memory provides faster read access times, enhancing the performance of applications requiring quick data retrieval.

Length: 9.616 mm

The length is optimized for a variety of installations, providing flexibility for manufacturers in designing compact electronic products.

Programming Voltage: 12 V

The programming voltage of 12 V allows for efficient data writing, crucial for applications requiring frequent memory updates.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures that this flash memory can be used in harsh conditions, significantly boosting reliability in critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this memory efficient for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel interface enables higher data transfer rates, enhancing the speed and efficiency of data transactions in systems.

Terminal Form: BALL

Ball terminals ensure a stable connection and allow for easier soldering processes, enhancing the overall assembly efficiency.

No. of Words: 1,048,576 words

With over a million words of storage, this flash memory provides ample capacity for a variety of data-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling, fitting well in systems that require processing of large data sizes.

Terminal Pitch: 0.75 mm

A fine terminal pitch of 0.75 mm allows for high-density arrangements on PCBs, enabling complex circuit designs in compact spaces.

No. of Words Code: 1M

Supporting 1 million words of code, this memory is well-suited for applications that require substantial data storage, such as firmware or programs.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3 V makes this memory compatible with a variety of modern low-voltage devices, promoting energy efficiency.

Boot Block: BOTTOM

The bottom boot block configuration facilitates quick booting processes, enabling faster device start-up times essential for user satisfaction.

Memory Density: 16,777,216 bits

This high memory density supports extensive data storage needs, making it suitable for applications that require large data volumes.

Memory IC Type: FLASH

As a FLASH memory IC, it retains data without power, providing the essential non-volatile storage feature needed in various applications.

Maximum Access Time: 150 ns

A maximum access time of 150 ns ensures swift data retrieval, contributing to overall system efficiency and responsiveness.

Technical Specifications

Flash Memory M28W160B150GJ6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B46

Length:

9.616 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.865 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6.858 mm

Trade Compliance

M28W160B150GJ6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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