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M28W640HCB70N6F

STMicroelectronics

M28W640HCB70N6F by STMicroelectronics

STMicroelectronics M28W640HCB70N6F is a 3V NOR Flash Memory with 4Mx16 organization, 8,127 sectors, and 4194304 words. Operating in industrial temperature range (-40 to 85°C), it offers fast access time of 70ns. Suitable for applications requiring high-density memory storage and fast data retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,745 parts In-Stock

1+ parts

-

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1k+ parts

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5,745

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-

-

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Vyrian

USA . 4,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,765

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-

-

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Chip Stock

USA . 3,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,410

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Anansix

USA . 2,419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,419

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,118 parts In-Stock

1+ parts

$4.874

100+ parts

-

1k+ parts

$4.387

10k+ parts

-

2,118

$4.874

-

$4.387

-

MKK Technologies

India . 1,428 parts In-Stock

1+ parts

$9.166

100+ parts

-

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10k+ parts

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1,428

$9.166

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DigiPath Technology Company

USA . 1,428 parts In-Stock

1+ parts

$9.166

100+ parts

-

1k+ parts

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10k+ parts

-

1,428

$9.166

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-

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Ampacity Inc.

Singapore . 135 parts In-Stock

1+ parts

$14.000

100+ parts

-

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10k+ parts

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135

$14.000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

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5,000

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Argo Parts USA

USA . 4,337 parts In-Stock

1+ parts

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4,337

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Corphita

USA . 3,887 parts In-Stock

1+ parts

-

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3,887

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Continental Prestige Electronics

USA . 1,104 parts In-Stock

1+ parts

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1,104

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Parana Technologies

USA . 909 parts In-Stock

1+ parts

-

100+ parts

$5.828

1k+ parts

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10k+ parts

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909

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$5.828

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Overview

Unlock the power of reliable and high-quality flash memory technology with the M28W640HCB70N6F by STMicroelectronics. Designed for industrial-grade applications, this versatile memory device offers fast access times, low standby currents, and a wide operating temperature range. With its small outline and thin profile package, this flash memory is perfect for space-constrained designs. Whether used in automotive, telecommunications, or consumer electronics, the M28W640HCB70N6F provides valuable data storage solutions that enhance performance and reliability. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product suitable for a variety of applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent operation of different parts of the memory, increasing efficiency and speed.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability in various environments, making the product suitable for industrial applications.

Organization: 4MX16

Efficient organization of memory cells allows for faster access and processing of data.

Peak Reflow Temperature: 260

With a high peak reflow temperature, the product can withstand manufacturing processes without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the product energy-efficient and fast.

Memory IC Type: FLASH

Being a flash memory, the product offers non-volatile storage and fast read/write speeds, enhancing performance and reliability.

Technical Specifications

Flash Memory M28W640HCB70N6F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8,127

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

NO

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M28W640HCB70N6F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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