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M28W320FCT70N6E

Micron Technology

M28W320FCT70N6E by Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Data Polling: NO;

Median Price

$2.634

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 3 parts In-Stock

1+ parts

$2.002

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-

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3

$2.002

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Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$3.267

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68

$3.267

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Chip Stock

USA . 7,400 parts In-Stock

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7,400

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Cyclops Electronics Ltd

UK . 5,941 parts In-Stock

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Digiode

USA . 4,107 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Anansix

USA . 2,363 parts In-Stock

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Vyrian

USA . 909 parts In-Stock

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909

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Mil-Aero Solutions, Inc.

USA . 615 parts In-Stock

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615

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Inventory MP

USA . 21 parts In-Stock

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21

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BCID Electronics Ltd.

Israel . 19 parts In-Stock

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NAC Semi

USA . 9 parts In-Stock

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9

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NexGen Digital

USA . 1 parts In-Stock

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1

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Microfarads

USA . 1 parts In-Stock

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1

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Bristol Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,732 parts In-Stock

1+ parts

$3.267

100+ parts

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1k+ parts

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10k+ parts

$3.202

2,732

$3.267

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-

$3.202

Argo Parts USA

USA . 1,042 parts In-Stock

1+ parts

$3.267

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1,042

$3.267

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IDEA Electronic Components Group

UK . 452 parts In-Stock

1+ parts

$3.818

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$3.436

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452

$3.818

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$3.436

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Aztec Data Supply Inc.

USA . 2,639 parts In-Stock

1+ parts

$4.160

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2,639

$4.160

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MKK Technologies

India . 1,789 parts In-Stock

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$7.180

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1,789

$7.180

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DigiPath Technology Company

USA . 1,789 parts In-Stock

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$7.180

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1,789

$7.180

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Andel Nordic

Denmark . 3,215 parts In-Stock

1+ parts

$8.138

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$7.812

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$7.812

3,215

$8.138

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$7.812

$7.812

AZTECH Wire

Italy . 586 parts In-Stock

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$12.728

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586

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Perfect Parts

USA . 8,959 parts In-Stock

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RC Electronics

USA . 6,882 parts In-Stock

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Corphita

USA . 5,547 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,097 parts In-Stock

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Kepictronics

USA . 2,880 parts In-Stock

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2,880

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Parana Technologies

USA . 1,399 parts In-Stock

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$4.565

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1,399

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$4.565

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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$3.202

1k+ parts

$3.104

10k+ parts

$3.038

1,000

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$3.202

$3.104

$3.038

Technical Specifications

Flash Memory M28W320FCT70N6E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8,63

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M28W320FCT70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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