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M28W160B150GJ6

STMicroelectronics

M28W160B150GJ6 by STMicroelectronics

M28W160B150GJ6 from STMicroelectronics is a 16Mb NOR Flash memory with a max access time of 150 ns and operates at voltages b/w 1.65V to 3V. It features an industrial temp range (-40 °C to 85 °C) and comes in a fine pitch grid array package. Ideal for embedded applications, it supports common flash interfaces and offers reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,076 parts In-Stock

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1,076

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Digiode

USA . 728 parts In-Stock

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728

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Anansix

USA . 608 parts In-Stock

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608

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,964 parts In-Stock

1+ parts

$2.273

100+ parts

-

1k+ parts

$2.046

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1,964

$2.273

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$2.046

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MKK Technologies

India . 1,362 parts In-Stock

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$4.275

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$4.275

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DigiPath Technology Company

USA . 1,362 parts In-Stock

1+ parts

$4.275

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1,362

$4.275

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Corphita

USA . 4,015 parts In-Stock

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4,015

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Parana Technologies

USA . 741 parts In-Stock

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$2.718

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741

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$2.718

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Overview

Revitalize your designs with the M28W160B150GJ6 Flash Memory from STMicroelectronics, a leader in innovation and quality. Engineered for reliability, this NOR FLASH memory is perfect for a variety of applications, from automotive systems to industrial controls. Enjoy superior performance with low power consumption and robust temperature resilience, ensuring optimal operation even in demanding environments. Elevate your projects with unmatched durability and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a smaller and more efficient design, enabling higher circuit density on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape is standard in many applications, making it compatible with a wide range of devices.

Power Supplies (V): 1.65/2.2, 3

Wide operating voltage range ensures versatility and flexibility in diverse power supply environments.

No. of Terminals: 46

With 46 terminals, the device offers ample connectivity options for data and control signals, facilitating complex operations.

Package Style (Meter): GRID ARRAY, FINE PITCH

The fine pitch grid array design supports high-density interconnections, making it suitable for advanced electronic applications.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature makes this flash memory reliable in demanding thermal environments.

Organization: 1MX16

The memory organization of 1MX16 allows for efficient data handling and management in various applications.

Minimum Operating Temperature: -40 °C

Its ability to operate at low temperatures ensures reliable performance in extreme conditions.

No. of Sectors/Size: 8,31

The provision of multiple sectors allows for better data organization and management, enhancing overall efficiency.

Terminal Finish: TIN LEAD

Tin-lead terminal finish enhances solderability and reduces the risk of oxidation, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for space-efficient PCB designs and enables easier soldering.

Type: NOR TYPE

NOR type flash memory is suitable for applications requiring high-speed random access, ideal for code execution.

Common Flash Interface: YES

Compatibility with a common flash interface simplifies integration with existing systems and improves usability.

Temperature Grade: INDUSTRIAL

An industrial temperature grade signifies robustness and suitability for harsh operating conditions.

Technology: CMOS

CMOS technology ensures low power consumption while maintaining high performance, ideal for energy-sensitive applications.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates, which is essential for high-performance applications.

Terminal Form: BALL

Ball terminal form is advantageous for heat dissipation and reduces the board space required for mounting.

Sector Size (Words): 4K, 32K

Flexible sector sizes provide options for optimizing performance and memory management in various applications.

Maximum Supply Current: 20 mA

Low maximum supply current ensures efficient power usage, extending the battery life in portable devices.

No. of Words: 1048576 words

A capacity of over a million words ensures ample storage for data-rich applications.

Memory Width: 16

A 16-bit memory width allows for efficient data processing and alignment with modern processing architectures.

Terminal Pitch: 0.75 mm

A 0.75 mm terminal pitch enables dense layouts while maintaining manufacturability.

No. of Words Code: 1M

1M words code capacity offers versatile applications ranging from simple to complex data storage requirements.

Command User Interface: YES

The presence of a command user interface enhances user interaction and control over memory functions.

Boot Block: BOTTOM

The bottom boot block configuration enables faster booting processes and better data security.

Memory Density: 16777216 bit

With a high memory density, this product facilitates large-scale data storage, ideal for memory-intensive applications.

Memory IC Type: FLASH

Flash memory is known for its non-volatile characteristics, ensuring data retention even without power.

Maximum Standby Current: 0.000005 Amp

Ultra-low standby current enhances energy efficiency, making it suitable for battery-powered devices.

Maximum Access Time: 150 ns

Fast access time ensures quick data retrieval, critical for high-performance applications.

Technical Specifications

Flash Memory M28W160B150GJ6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B46

JESD-609 Code:

e0

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

8,31

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA46,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.65/2.2,3

Qualification:

Not Qualified

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

M28W160B150GJ6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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