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M28W160B100GJ1T

STMicroelectronics

M28W160B100GJ1T by STMicroelectronics

M28W160B100GJ1T from STMicroelectronics is a NOR flash memory with a 16Mbit density, operating at 3.3V and featuring a max access time of 100ns. Its compact design includes a very thin profile grid array package, ideal for space-constrained applications. This device operates asynchronously, making it suitable for high-speed data storage in consumer electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,955 parts In-Stock

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4,955

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Vyrian

USA . 2,985 parts In-Stock

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2,985

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Anansix

USA . 493 parts In-Stock

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493

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 463 parts In-Stock

1+ parts

$2.301

100+ parts

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$2.071

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463

$2.301

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MKK Technologies

India . 2,198 parts In-Stock

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$4.327

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$4.327

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DigiPath Technology Company

USA . 2,198 parts In-Stock

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$4.327

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2,198

$4.327

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Corphita

USA . 1,913 parts In-Stock

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Parana Technologies

USA . 1,511 parts In-Stock

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$2.751

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$2.751

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Overview

Unlock the potential of your next project with the M28W160B100GJ1T Flash Memory from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution that enhances performance in consumer electronics, automotive, and industrial applications. With its compact design, low power consumption, and swift access times, this memory chip offers exceptional efficiency, ensuring your devices are faster and smarter, driving your success forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY provides durability and protection, making the memory reliable for various applications.

Surface Mount: YES

Surface mount technology allows for easier integration into compact circuit designs, optimizing space and assembly.

Package Shape: RECTANGULAR

The rectangular shape helps in space-efficient layouts, making it suitable for various electronic applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data processing, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V is standard for many devices, ensuring compatibility and widespread usage.

No. of Terminals: 46

With 46 terminals, this device supports a wide array of connections, allowing for versatile applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The very thin profile and fine pitch make it ideal for high-density designs, contributing to compact and efficient electronic systems.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures functionality in a wide range of environments.

Organization: 1MX16

The 1MX16 organization supports efficient data handling and memory management for various applications.

Minimum Operating Temperature: 0 °C

Operational capability from 0 °C guarantees performance in colder environments, expanding application versatility.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier integration into printed circuit boards (PCBs), improving assembly efficiency.

Maximum Seated Height: 0.865 mm

A low seated height is conducive to compact designs, allowing for denser layouts.

Width: 6.858 mm

A width of 6.858mm strikes a balance between compactness and connection versatility.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V ensures compatibility with a variety of low-voltage applications.

Type: NOR TYPE

NOR type flash memory is known for its reliability and ease of integration in various electronic devices.

Length: 9.616 mm

A length of 9.616mm supports compact designs while accommodating various layout requirements.

Programming Voltage (V): 12

A programming voltage of 12V enables effective data writing and reprogramming capabilities.

Temperature Grade: COMMERCIAL

Commercial grade ensures that the device is suitable for general-purpose applications across various environments.

Technology: CMOS

CMOS technology offers lower power consumption, making this memory ideal for energy-efficient designs.

Parallel or Serial: PARALLEL

Parallel access allows for higher data transfer rates, enhancing performance, especially in high-demand applications.

Terminal Form: BALL

Ball terminal form provides reliable connections and improves soldering efficiency during assembly.

No. of Words: 1048576 words

With over a million words of storage, this flash memory supports large data applications.

Memory Width: 16

A memory width of 16 bits enables effective handling of data required for most modern applications.

Terminal Pitch: 0.75 mm

A terminal pitch of 0.75mm helps in ensuring a reliable connection while maintaining compact design.

No. of Words Code: 1M

The 1M words code supports significant data storage, making it ideal for various applications.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V allows for headroom in power supply design, ensuring stable operation.

Boot Block: BOTTOM

A bottom boot block configuration enhances data protection and improves boot-up times.

Memory Density: 16777216 bit

With a memory density of 16 Megabits, it is capable of supporting applications requiring substantial data storage.

Memory IC Type: FLASH

Flash memory provides versatility for data storage and is ideal for rewritable applications.

Maximum Access Time: 100 ns

A maximum access time of 100 ns enables quick read and write operations, enhancing device responsiveness.

Technical Specifications

Flash Memory M28W160B100GJ1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B46

Length:

9.616 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.865 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6.858 mm

Trade Compliance

M28W160B100GJ1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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