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M28W160B120N6T

STMicroelectronics

M28W160B120N6T by STMicroelectronics

M28W160B120N6T from STMicroelectronics is a 16Mbit NOR Flash memory with a 3V nominal supply, ideal for industrial applications. It features an asynchronous operating mode and operates within -40 °C to 85°C. With a compact SOIC package, it ensures efficient space utilization in designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,942 parts In-Stock

1+ parts

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100+ parts

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1,942

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Vyrian

USA . 1,060 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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1,060

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Digiode

USA . 288 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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288

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,115 parts In-Stock

1+ parts

$2.976

100+ parts

-

1k+ parts

$2.679

10k+ parts

-

1,115

$2.976

-

$2.679

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MKK Technologies

India . 2,325 parts In-Stock

1+ parts

$5.597

100+ parts

-

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10k+ parts

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2,325

$5.597

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DigiPath Technology Company

USA . 2,325 parts In-Stock

1+ parts

$5.597

100+ parts

-

1k+ parts

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10k+ parts

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2,325

$5.597

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Corphita

USA . 3,824 parts In-Stock

1+ parts

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3,824

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Parana Technologies

USA . 606 parts In-Stock

1+ parts

-

100+ parts

$3.558

1k+ parts

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606

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$3.558

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Overview

Elevate your designs with the M28W160B120N6T from STMicroelectronics—a leading name in innovative memory solutions. This high-performance flash memory combines reliability with exceptional versatility, making it ideal for industrial applications where durability is key. Experience faster data access and reduced power consumption, ensuring your projects stay efficient and cost-effective. Trust in ST's commitment to quality and innovation to unlock new possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight materials enhance the reliability and portability of the flash memory.

Surface Mount: YES

Surface mount technology allows for compact designs, making it suitable for modern electronics.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space utilization on PCBs for more efficient layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous mode allows for simpler integration and potentially faster data access in some applications.

Nominal Supply Voltage / Vsup (V): 3

A standard supply voltage ensures compatibility with a wide range of electronic systems.

Power Supplies (V): 1.65/2.2, 3

Versatile power supply options offer flexibility for diverse applications and energy efficiency.

No. of Terminals: 48

A higher number of terminals facilitates complex interactions with other components, enhancing functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact design is ideal for space-constrained applications, providing design flexibility.

Maximum Operating Temperature: 85 °C

High temperature rating ensures reliable performance in demanding industrial environments.

Organization: 1MX16

This memory organization optimizes data access and allows efficient storage management.

Minimum Operating Temperature: -40 °C

Wide temperature range makes the product suitable for extreme environments and industrial applications.

No. of Sectors/Size: 8, 31

Multiple sectors provide flexibility in data management and organization for various applications.

Terminal Finish: TIN LEAD

Tin-lead finishes promote good solderability and improve product longevity in connections.

Terminal Position: DUAL

Dual terminal positioning can enhance stability and connection options in various layouts.

Maximum Seated Height: 1.2 mm

Low profile minimizes physical space used, suitable for thin devices.

Width: 12 mm

Compact width makes it versatile for a wide range of electronic designs.

Minimum Supply Voltage (Vsup): 2.7 V

Flexibility in supply voltage helps in adapting to different power source requirements.

Type: NOR TYPE

NOR types are ideal for random access applications, enabling faster data retrieval.

Common Flash Interface: YES

Compatibility with standard interfaces ensures easy integration with various microcontrollers.

Length: 18.4 mm

Compact length allows for effective use in confined spaces or portable devices.

Programming Voltage (V): 12

Higher programming voltage can improve write performance and reliability.

Temperature Grade: INDUSTRIAL

Industrial-grade certification guarantees reliable performance in harsh conditions.

Technology: CMOS

CMOS technology is energy-efficient, contributing to lower power consumption.

Parallel or Serial: PARALLEL

Parallel access provides faster data transfer rates, improving overall performance.

Terminal Form: GULL WING

Gull wing terminal design enhances soldering and connection quality with PCBs.

Sector Size (Words): 4K, 32K

Flexibility in sector sizes allows for diverse applications and efficient data management.

Maximum Supply Current: 20 mA

Low current draw enhances energy efficiency, making it suitable for battery-operated devices.

No. of Words: 1048576 words

High word count provides ample storage capacity for a variety of applications.

Memory Width: 16

Wide memory width allows for efficient data handling and faster processing.

Terminal Pitch: 0.5 mm

Small terminal pitch aids in high-density circuit designs, maximizing board space utilization.

No. of Words Code: 1M

1M words code signifies substantial memory capacity tailored for complex applications.

Command User Interface: YES

User-friendly command interface simplifies the integration process with microcontrollers.

Maximum Supply Voltage (Vsup): 3.3 V

Flexible supply voltage options enhance compatibility with a range of modern electronic devices.

Boot Block: BOTTOM

Bottom boot block structure allows for efficient boot loading processes.

Memory Density: 16777216 bit

High memory density enables storage of larger applications and data sets.

Memory IC Type: FLASH

Flash memory provides non-volatile data storage, making it ideal for long-term data retention.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current contributes to overall energy efficiency, extending battery life.

Maximum Access Time: 120 ns

Fast access time ensures efficient data retrieval, improving system performance.

Technical Specifications

Flash Memory M28W160B120N6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.65/2.2,3

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M28W160B120N6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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