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M28W160B150GJ1

STMicroelectronics

M28W160B150GJ1 by STMicroelectronics

M28W160B150GJ1 from STMicroelectronics is a 16Mb NOR Flash memory with a max access time of 150 ns and operates at voltages b/w 1.65V to 3V. It features a fine pitch grid array package, ideal for compact applications. This device supports commercial temp grades and offers reliable data storage solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,986 parts In-Stock

1+ parts

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4,986

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Anansix

USA . 2,720 parts In-Stock

1+ parts

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2,720

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Vyrian

USA . 2,097 parts In-Stock

1+ parts

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2,097

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,832 parts In-Stock

1+ parts

$4.824

100+ parts

-

1k+ parts

$4.342

10k+ parts

-

1,832

$4.824

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$4.342

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MKK Technologies

India . 1,185 parts In-Stock

1+ parts

$9.072

100+ parts

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1,185

$9.072

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DigiPath Technology Company

USA . 1,185 parts In-Stock

1+ parts

$9.072

100+ parts

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10k+ parts

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1,185

$9.072

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Corphita

USA . 903 parts In-Stock

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903

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Parana Technologies

USA . 338 parts In-Stock

1+ parts

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100+ parts

$5.768

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338

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$5.768

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Overview

Unlock exceptional performance with the M28W160B150GJ1 Flash Memory from STMicroelectronics. Renowned for their reliability, STMicroelectronics delivers this high-quality NOR Flash solution ideal for a range of applications, from consumer electronics to automotive systems. Experience faster data processing and reduced power consumption, ensuring your devices operate seamlessly. Elevate your projects with a trusted partner that prioritizes innovation and excellence—choose the M28W160B150GJ1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it a reliable choice for various applications.

Surface Mount: YES

Surface mount capability allows for compact designs and simplifies the manufacturing process, contributing to overall system efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on circuit boards, making it suitable for high-density applications.

Power Supplies (V): 1.65/2.2,3

Wide power supply range enhances compatibility with various systems, ensuring versatile use across different devices.

No. of Terminals: 46

A higher terminal count enables more connections and functionalities, supporting complex applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array, fine pitch design provides excellent electrical performance while allowing for compact surface mounting.

Maximum Operating Temperature: 70 °C

Operating reliably at higher temperatures increases the product's potential for use in industrial and harsh environments.

Organization: 1MX16

This organization format allows for efficient data storage and retrieval, effective for applications needing large data handling.

Minimum Operating Temperature: 0 °C

The minimum operating temperature ensures functionality in a broad range of environmental conditions.

No. of Sectors/Size: 8,31

Multiple sectors allow for better data management and security, making it suitable for applications requiring organized data storage.

Terminal Finish: TIN LEAD

The tin-lead finish provides reliable solderability and mechanical strength, enhancing product longevity.

Terminal Position: BOTTOM

Bottom terminal position is advantageous for reducing board space and enhancing layout flexibility.

Type: NOR TYPE

NOR type flash memory allows for random access, making it excellent for applications needing faster read times.

Common Flash Interface: YES

Compatibility with common flash interfaces enhances integration with various microcontrollers and systems, simplifying design.

Temperature Grade: COMMERCIAL

Commercial temperature grade indicates suitability for a wide range of consumer applications, providing peace of mind in reliability.

Technology: CMOS

CMOS technology offers lower power consumption, which is a significant advantage for portable devices.

Parallel or Serial: PARALLEL

Parallel data transfer enables faster communication speeds, ideal for high-performance applications.

Terminal Form: BALL

Ball terminal form enhances soldering stability and improves thermal performance.

Sector Size (Words): 4K,32K

Versatile sector sizes help optimize memory usage and performance based on specific application requirements.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA indicates low power consumption, suitable for battery-operated devices.

No. of Words: 1048576 words

With 1,048,576 words, this flash memory offers substantial storage capacity for complex applications.

Memory Width: 16

16-bit memory width allows efficient processing of data, making it suitable for various digital applications.

Terminal Pitch: 0.75 mm

The 0.75 mm terminal pitch allows for a compact layout while maintaining effective performance.

No. of Words Code: 1M

1M code words provide sufficient memory for extensive data, increasing the product’s versatility.

Command User Interface: YES

A user-friendly command interface simplifies integration and application development, saving time for engineers.

Boot Block: BOTTOM

Bottom boot block positioning aids in faster boot times, vital for applications requiring quick startup.

Memory Density: 16777216 bit

With a memory density of 16 megabits, it provides ample storage for modern applications, enhancing overall performance.

Memory IC Type: FLASH

As a flash memory type, it allows for reprogrammability, making it adaptable for diverse applications.

Maximum Standby Current: 0.000005 Amp

An extremely low standby current indicates high energy efficiency, making it ideal for low-power applications.

Maximum Access Time: 150 ns

The 150 ns access time ensures quick read/write operations, making this flash memory suitable for performance-sensitive applications.

Technical Specifications

Flash Memory M28W160B150GJ1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B46

JESD-609 Code:

e0

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

8,31

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA46,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.65/2.2,3

Qualification:

Not Qualified

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

M28W160B150GJ1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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