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M28W160B100N6T

STMicroelectronics

M28W160B100N6T by STMicroelectronics

M28W160B100N6T from STMicroelectronics is a 16Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 100 ns. It operates in industrial temperatures (-40 °C to 85°C) and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage and fast access times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,586 parts In-Stock

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4,586

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Vyrian

USA . 3,180 parts In-Stock

1+ parts

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3,180

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Anansix

USA . 1,111 parts In-Stock

1+ parts

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1,111

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 373 parts In-Stock

1+ parts

$4.593

100+ parts

-

1k+ parts

$4.133

10k+ parts

-

373

$4.593

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$4.133

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MKK Technologies

India . 216 parts In-Stock

1+ parts

$8.636

100+ parts

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216

$8.636

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DigiPath Technology Company

USA . 216 parts In-Stock

1+ parts

$8.636

100+ parts

-

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216

$8.636

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Parana Technologies

USA . 1,773 parts In-Stock

1+ parts

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100+ parts

$5.491

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1,773

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$5.491

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Corphita

USA . 304 parts In-Stock

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304

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Overview

Unlock unparalleled performance with the M28W160B100N6T flash memory from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for versatility and reliability, this compact, high-density solution excels in industrial applications, delivering swift data access while minimizing power consumption. With its robust temperature range and asynchronous operation, you can count on seamless integration and durability. Elevate your projects with ST's commitment to quality—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides protection against environmental factors, enhancing the reliability of the flash memory.

Surface Mount: YES

Surface mount technology allows for compact designs, making it easier to integrate into smaller devices.

Package Shape: RECTANGULAR

The rectangular shape is commonly used, ensuring compatibility with a wide range of circuit board layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V ensures compatibility with most modern processors and systems.

Power Supplies (V): 3/3.3, 3.3

Flexibility in power supply options facilitates easier design implementations in various applications.

No. of Terminals: 48

The 48 terminals provide ample connectivity for both data and control signals, enhancing device capabilities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile offer space savings on PCBs, making it ideal for compact electronic designs.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliable performance in demanding industrial environments.

Organization: 1MX16

This organization allows for efficient data storage and retrieval, optimizing performance for larger applications.

Minimum Operating Temperature: -40 °C

A wide temperature range of -40 °C to 85°C makes this product suitable for extreme operating conditions.

No. of Sectors/Size: 8, 31

Multiple sectors allow for organized memory management, improving data access and reliability.

Terminal Finish: TIN LEAD

The tin-lead finish ensures good solderability and reliability in harsh environments.

Terminal Position: DUAL

Dual terminal positioning offers design flexibility and enhanced performance in various mounting configurations.

Maximum Seated Height: 1.2 mm

A low seated height of 1.2 mm allows for efficient layering in compact designs, saving valuable board space.

Width: 12 mm

The 12 mm width strikes a balance between size and functionality, ensuring compatibility with diverse applications.

Minimum Supply Voltage (Vsup): 3 V

The ability to operate at a minimum voltage of 3V enhances versatility in power-sensitive applications.

Type: NOR TYPE

NOR type memory offers faster read speeds, making it suitable for applications that require quick data access.

Common Flash Interface: YES

Compatibility with common flash interfaces simplifies integration into existing systems, saving time and resources.

Length: 18.4 mm

The compact length allows for efficient placement on PCBs, facilitating better component layout.

Programming Voltage (V): 12

Supporting a programming voltage of 12V allows for effective write cycles, improving reliability over time.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures optimal performance in harsh environments, extending product lifespan.

Technology: CMOS

CMOS technology facilitates low power consumption, making it ideal for battery-operated devices.

Parallel or Serial: PARALLEL

The parallel interface offers fast data transfer rates, enhancing performance in high-speed applications.

Terminal Form: GULL WING

The gull-wing terminal design contributes to reliable soldering and enhances heat dissipation during operation.

Sector Size (Words): 4K, 32K

Varied sector sizes allow for flexible storage solutions tailored to specific application needs.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA indicates low power consumption, ideal for power-sensitive applications.

No. of Words: 1048576 words

With 1,048,576 words, this product provides substantial storage capacity for large data sets and applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and stronger performance in multi-bit applications.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm supports high-density circuit board designs, maximizing available space.

No. of Words Code: 1M

1M word capacity ensures sufficient storage for a wide variety of applications, from consumer electronics to data logging.

Command User Interface: YES

User-friendly command interface simplifies interaction with the memory, allowing for easier implementation in software.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures reliable operation without risking damage to the device.

Boot Block: BOTTOM

Bottom boot block configuration allows for effective firmware storage and management, enhancing overall system security.

Memory Density: 16777216 bit

High memory density enables extensive data storage capabilities, making it suitable for a diverse range of applications.

Memory IC Type: FLASH

As a flash memory IC, it provides quick read and write capabilities, essential for applications requiring frequent updates.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current significantly reduces power consumption during idle periods, prolonging battery life.

Maximum Access Time: 100 ns

Fast access time of 100 ns contributes to high-speed performance, particularly in demanding applications.

Technical Specifications

Flash Memory M28W160B100N6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3,3.3

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M28W160B100N6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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