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M28W160B120GJ1

STMicroelectronics

M28W160B120GJ1 by STMicroelectronics

M28W160B120GJ1 from STMicroelectronics is a 16Mb NOR Flash memory with a max access time of 120 ns and operates at voltages b/w 1.65V to 3V. It features a fine pitch grid array package and supports commercial temperature ranges. Ideal for embedded applications, it offers reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,906 parts In-Stock

1+ parts

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3,906

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Vyrian

USA . 1,588 parts In-Stock

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1,588

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Anansix

USA . 517 parts In-Stock

1+ parts

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517

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 461 parts In-Stock

1+ parts

$2.260

100+ parts

-

1k+ parts

$2.034

10k+ parts

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461

$2.260

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$2.034

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MKK Technologies

India . 2,309 parts In-Stock

1+ parts

$4.251

100+ parts

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2,309

$4.251

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DigiPath Technology Company

USA . 2,309 parts In-Stock

1+ parts

$4.251

100+ parts

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2,309

$4.251

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Corphita

USA . 3,187 parts In-Stock

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3,187

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Parana Technologies

USA . 2,185 parts In-Stock

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100+ parts

$2.703

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2,185

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$2.703

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Overview

Elevate your designs with the M28W160B120GJ1 from STMicroelectronics—your partner in reliability and innovation. This NOR Flash Memory delivers exceptional performance for a wide range of applications, from consumer electronics to automotive systems. Enjoy the advantages of low power consumption and fast access times, ensuring your devices run smoothly and efficiently. Trust in STMicroelectronics' reputation for quality and support, providing unmatched value that drives success in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, enhancing the lifespan of the flash memory.

Surface Mount: YES

Surface mount technology allows for a compact design, making it suitable for modern electronics with space constraints.

Package Shape: RECTANGULAR

The rectangular shape optimizes the layout for PCB designs, allowing for efficient space utilization.

Power Supplies (V): 1.65/2.2, 3

This flexible operating voltage range ensures compatibility with various devices, making it versatile for different applications.

No. of Terminals: 46

Having 46 terminals provides ample connectivity options for integration into complex systems.

Package Style (Meter): GRID ARRAY, FINE PITCH

Fine pitch grid array design allows for high-density applications, essential for modern electronics needing small footprints.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C makes it suitable for a variety of environments, ensuring stable performance under heat.

Organization: 1MX16

This organization allows for efficient data retrieval and storage, making it suitable for high-performance applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature ensures compatibility with devices used in moderate to warm climates.

No. of Sectors/Size: 8, 31

Multiple sectors provide flexible data management options, supporting a wide range of applications from embedded systems to larger computing environments.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and reliability, which is particularly beneficial for assembly processes.

Terminal Position: BOTTOM

Bottom terminal position aids in efficient use of PCB space, contributing to a compact overall product design.

Type: NOR TYPE

NOR flash memory is suitable for applications requiring random access and fast read speeds, making it a good choice for code storage.

Common Flash Interface: YES

The common flash interface facilitates easier integration into existing systems and reduces development time.

Temperature Grade: COMMERCIAL

Commercial temperature grade indicates reliability for standard consumer applications without extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption, making it an energy-efficient choice for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel data handling allows for faster data transfer rates, suitable for high-performance applications requiring quick access.

Terminal Form: BALL

Ball terminals enhance mechanical stability and reliability when soldering to PCBs, reducing the risk of damage.

Sector Size (Words): 4K, 32K

Varied sector sizes offer flexibility for different applications, allowing optimized data management and storage.

Maximum Supply Current: 20 mA

Low supply current requirements ensure minimal energy consumption, ideal for powering compact devices.

No. of Words: 1,048,576 words

Having over a million words provides significant storage capacity, accommodating applications requiring substantial data.

Memory Width: 16

A 16-bit width allows for efficient data handling and supports a wide range of applications with various data needs.

Terminal Pitch: 0.75 mm

Fine terminal pitch enables higher integration density and enhances the capability to design compact PCBs.

No. of Words Code: 1M

With a 1M word capacity, this product can store ample information, making it suitable for diverse applications.

Command User Interface: YES

A command user interface simplifies access to storage functions, allowing for easier control in software applications.

Boot Block: BOTTOM

Having a boot block at the bottom allows for quicker access to essential startup routines, enhancing system performance.

Memory Density: 16,777,216 bit

High memory density means more storage space in a smaller form factor, ideal for portable devices.

Memory IC Type: FLASH

Flash memory offers the ability to reprogram and erase, making it versatile for various applications, including firmware updates.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current maximizes battery life in portable applications, making this product efficient for mobile devices.

Maximum Access Time: 120 ns

Fast access time ensures quick data retrieval, crucial for performance-critical applications.

Technical Specifications

Flash Memory M28W160B120GJ1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B46

JESD-609 Code:

e0

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

8,31

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA46,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.65/2.2,3

Qualification:

Not Qualified

Sector Size (Words):

4K,32K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

M28W160B120GJ1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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