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M28W160B150GJ1T

STMicroelectronics

M28W160B150GJ1T by STMicroelectronics

M28W160B150GJ1T from STMicroelectronics is a 16Mb NOR Flash memory with a max access time of 150 ns and operates at a supply voltage range of 2.7V to 3.3V. Its compact, thin-profile design makes it ideal for space-constrained applications. This asynchronous memory is perfect for embedded systems requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,686 parts In-Stock

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2,686

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Anansix

USA . 1,427 parts In-Stock

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1,427

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Digiode

USA . 363 parts In-Stock

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363

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,555 parts In-Stock

1+ parts

$1.956

100+ parts

-

1k+ parts

$1.760

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1,555

$1.956

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$1.760

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MKK Technologies

India . 1,203 parts In-Stock

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$3.678

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$3.678

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DigiPath Technology Company

USA . 1,203 parts In-Stock

1+ parts

$3.678

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1,203

$3.678

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Corphita

USA . 2,509 parts In-Stock

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2,509

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Parana Technologies

USA . 2,194 parts In-Stock

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$2.339

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2,194

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$2.339

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Overview

Unlock unparalleled performance and reliability with the M28W160B150GJ1T Flash Memory from STMicroelectronics. Renowned for their cutting-edge technology, STMicroelectronics ensures this high-quality component excels in diverse applications—from consumer electronics to embedded systems. With easy integration and robust data retention, it empowers your designs, offering efficiency and durability that translate into exceptional value for your projects. Discover the advantage of innovation today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures a robust construction ideal for electronic applications.

Surface Mount: YES

The surface mount capability allows for easier integration into compact designs and improves assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and facilitates effective thermal management.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance by allowing operations to occur independently of each other.

Nominal Supply Voltage / Vsup: 3 V

A nominal supply voltage of 3V makes it compatible with a variety of low-power applications.

No. of Terminals: 46

With 46 terminals, this product supports a robust interface for various functions and enhances connectivity.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This thin profile design saves space and enables high-density PCB layouts, perfect for compact devices.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in a wide range of environments.

Organization: 1MX16

The 1MX16 organization offers efficient storage and data management, suitable for a variety of applications.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C allows this product to function in diverse climates.

Terminal Position: BOTTOM

Bottom terminal positioning aids in space-saving designs and enhances mounting options.

Maximum Seated Height: 0.865 mm

The low seated height contributes to the thin profile, making it suitable for space-constrained applications.

Width: 6.858 mm

A narrow width provides flexibility for layout design, especially in compact electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

Operating down to 2.7 V makes this memory flexible for various low-voltage applications.

Type: NOR TYPE

NOR type flash memory is known for faster read speeds and more efficient random access capabilities.

Length: 9.616 mm

The compact length allows for high-density packaging, ideal for modern electronic designs.

Programming Voltage (V): 12

Requires a programming voltage of 12V, enabling efficient data writing capabilities.

Temperature Grade: COMMERCIAL

The commercial temperature grade makes it suitable for use in various consumer electronics.

Technology: CMOS

CMOS technology offers low power consumption and high performance, ideal for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data transfer rates, enhancing overall performance.

Terminal Form: BALL

Ball terminal form provides strong connections and facilitates easier soldering processes.

No. of Words: 1048576 words

This ample word count supports extensive data storage for various applications.

Memory Width: 16

A 16-bit memory width allows efficient data handling and improved throughput.

Terminal Pitch: 0.75 mm

The fine terminal pitch supports high-density packaging while maintaining reliable connections.

No. of Words Code: 1M

1M word storage capacity is ideal for embedded systems and consumer electronics.

Maximum Supply Voltage (Vsup): 3.3 V

The 3.3 V maximum supply voltage is widely adopted in modern electronics, ensuring broad compatibility.

Boot Block: BOTTOM

The bottom boot block enhances design flexibility for firmware storage and system reliability.

Memory Density: 16777216 bit

This high memory density ensures sufficient storage for complex applications and data-intensive tasks.

Memory IC Type: FLASH

As a flash memory IC, it provides faster access times compared to other types of memory, improving performance.

Maximum Access Time: 150 ns

A maximum access time of 150 ns contributes to quick data retrieval and enhances system performance.

Technical Specifications

Flash Memory M28W160B150GJ1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

150 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B46

Length:

9.616 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.865 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6.858 mm

Trade Compliance

M28W160B150GJ1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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