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M28W160B100GJ6T

STMicroelectronics

M28W160B100GJ6T by STMicroelectronics

M28W160B100GJ6T from STMicroelectronics is a NOR flash memory with a 16Mb density, operating at 3.3V and featuring a max access time of 100ns. Its compact design (46 terminals) makes it ideal for industrial applications in space-constrained environments. With an operating temp range of -40 °C to 85°C, it's reliable for harsh conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,313 parts In-Stock

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4,313

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Vyrian

USA . 1,381 parts In-Stock

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1,381

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Anansix

USA . 234 parts In-Stock

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234

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,708 parts In-Stock

1+ parts

$1.915

100+ parts

-

1k+ parts

$1.723

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$1.915

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$1.723

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MKK Technologies

India . 449 parts In-Stock

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$3.600

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449

$3.600

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DigiPath Technology Company

USA . 449 parts In-Stock

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$3.600

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449

$3.600

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Parana Technologies

USA . 1,533 parts In-Stock

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$2.289

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1,533

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$2.289

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Corphita

USA . 1,485 parts In-Stock

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1,485

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Overview

Elevate your designs with the M28W160B100GJ6T from STMicroelectronics—a premier choice in Flash Memory solutions. Crafted with industrial-grade quality, this reliable component enhances performance in diverse applications, from consumer electronics to automotive systems. Its efficient design ensures superior speed and low power consumption, empowering you to create innovative products that stand out in the market. Enjoy peace of mind knowing you’re backed by a trusted leader in semiconductor technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount capability facilitates compact design and integration into modern electronic circuits, enhancing space efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier surface mounting and optimal use of board space.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances performance by allowing quick data access without the need for a clock signal.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V makes it compatible with a wide range of devices and energy efficient.

No. of Terminals: 46

The 46 terminals provide ample connectivity options for versatile applications in embedded systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The thin profile and fine pitch enable high-density assembly, ideal for modern compact electronic designs.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes the product suitable for industrial applications with moderate thermal demands.

Organization: 1MX16

The 1M x 16 organization provides a balanced approach to data handling capabilities, making it effective for various applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this flash memory is capable of functioning in extreme conditions, enhancing its reliability.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies mounting and can improve the thermal performance of the device.

Maximum Seated Height: 0.865 mm

A low seated height of 0.865 mm allows for efficient use of vertical space in compact electronic designs.

Width: 6.858 mm

A width of 6.858 mm ensures compatibility with a range of circuit boards while maintaining a compact size.

Minimum Supply Voltage (Vsup): 3 V

Operating down to 3V offers flexibility and helps in energy-sensitive applications, optimizing battery life.

Type: NOR TYPE

NOR-type flash memory is known for efficient random access capabilities, allowing quick read and write operations.

Length: 9.616 mm

This length maintains the compact specifications needed for modern electronic devices, enhancing design flexibility.

Programming Voltage (V): 12

A programming voltage of 12V is standard for NOR flash, ensuring reliable writing and erasing processes.

Temperature Grade: INDUSTRIAL

This grade indicates the product is designed for robustness in industrial environments where reliability is critical.

Technology: CMOS

CMOS technology enhances power efficiency, making the product suitable for low-power applications.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfers compared to serial, making it suitable for high-speed applications.

Terminal Form: BALL

Ball terminals provide reliable connections and facilitate better thermal dissipation during operation.

No. of Words: 1048576 words

Offering 1,048,576 words gives a sufficient capacity for storing a range of data, ideal for many applications.

Memory Width: 16

A memory width of 16 bits enables effective data handling for a variety of applications, balancing speed and capacity.

Terminal Pitch: 0.75 mm

A terminal pitch of 0.75 mm supports fine-pitch applications, allowing for minimal board space usage.

No. of Words Code: 1M

The 1M words code represents solid storage capabilities for embedded applications, ensuring data availability.

Maximum Supply Voltage (Vsup): 3.6 V

Operating up to 3.6V provides flexibility in voltage range, accommodating various power supply scenarios.

Boot Block: BOTTOM

A bottom boot block simplifies firmware updates and improves data management in embedded systems.

Memory Density: 16777216 bit

With a density of 16 megabits, the memory offers substantial storage capacity for data-intensive applications.

Memory IC Type: FLASH

Flash memory is non-volatile, ensuring data retention even without power, making it a reliable choice for storage.

Maximum Access Time: 100 ns

A maximum access time of 100 ns ensures quick response times, enhancing system performance for critical applications.

Technical Specifications

Flash Memory M28W160B100GJ6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

JESD-30 Code:

R-PBGA-B46

Length:

9.616 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

46

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.865 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6.858 mm

Trade Compliance

M28W160B100GJ6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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