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NTVB065NSA-L

Onsemi

NTVB065NSA-L by Onsemi

NTVB065NSA-L by Onsemi is a silicon surge protector with a max breakdown voltage of 88V. It operates b/w -40 °C to 150°C, making it suitable for various applications requiring protection against surges. With surface mount capability and dual terminals, it offers reliable performance in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,072 parts In-Stock

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Digiode

USA . 1,706 parts In-Stock

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AZTECH Wire

Italy . 279 parts In-Stock

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$8.400

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279

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Component Stockers USA

USA . 714 parts In-Stock

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$99.990

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714

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Kepictronics

USA . 30,000 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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TANS Electronics

Latvia . 5,787 parts In-Stock

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SupplyDigital Components

Austria . 3,572 parts In-Stock

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Problanco Electronics

Mexico . 1,938 parts In-Stock

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Kulean Microsystems

USA . 955 parts In-Stock

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Corphita

USA . 616 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 338 parts In-Stock

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Overview

Protect your electronics with the advanced NTVB065NSA-L Silicon Surge Protector from Onsemi. Manufactured with top-quality materials and cutting-edge technology, this device offers unparalleled protection against power surges, ensuring the longevity and reliability of your valuable equipment. Ideal for a wide range of applications, this surge protector is designed to provide peace of mind and safeguard your devices in any situation. Invest in the NTVB065NSA-L today and experience the ultimate protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the surge protector, ensuring it can withstand harsh conditions.

Configuration: SINGLE

Single configuration makes it easy to install and use, without the need for complex setup.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to fit into various electronic devices or systems.

Terminal Form: C BEND

C bend terminal form ensures secure connections and stability during use.

No. of Terminals: 2

Simple 2-terminal design simplifies installation and reduces chances of errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability and performance even in demanding environments.

Trigger Device Type: SILICON SURGE PROTECTOR

Silicon surge protector is known for its high efficiency in protecting devices from voltage spikes and surges.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in a wide range of conditions.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: DUAL

Dual terminal position allows for flexible installation options and stable connections.

Maximum Breakdown Voltage: 88 V

High maximum breakdown voltage ensures effective protection against high voltage surges.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents damage to the surge protector during assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering during manufacturing process.

Technical Specifications

Silicon Surge Protectors NTVB065NSA-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

88 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB065NSA-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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