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NTVB058NSB-L

Onsemi

NTVB058NSB-L by Onsemi

NTVB058NSB-L by Onsemi is a silicon surge protector with a max breakdown voltage of 77V. It has a trigger device type of SILICON SURGE PROTECTOR and operates b/w -40 °C to 150°C. Ideal for applications requiring protection against electrical surges in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,325 parts In-Stock

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7,325

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Digiode

USA . 615 parts In-Stock

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615

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Distributors (Availability)

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AZTECH Wire

Italy . 796 parts In-Stock

1+ parts

$18.820

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796

$18.820

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Problanco Electronics

Mexico . 7,979 parts In-Stock

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7,979

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Kulean Microsystems

USA . 7,293 parts In-Stock

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7,293

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TANS Electronics

Latvia . 5,378 parts In-Stock

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5,378

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SupplyDigital Components

Austria . 2,712 parts In-Stock

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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887

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Corphita

USA . 285 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Overview

Discover the power of superior surge protection with the Onsemi NTVB058NSB-L Silicon Surge Protector. Manufactured by a trusted industry leader, this single configuration device offers reliable overvoltage protection in a compact, surface mount package. Ideal for a range of applications, this high-quality product ensures your valuable electronics are safeguarded against damaging voltage spikes. Trust in Onsemi for peace of mind and unbeatable quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the surge protector, ensuring a longer lifespan.

Configuration: SINGLE

Simplifies installation and usage, making it user-friendly.

Surface Mount: YES

Allows for easy mounting on circuit boards, saving space and simplifying assembly.

Terminal Form: C BEND

Facilitates easy connection and ensures secure attachment.

No. of Terminals: 2

Provides a simple and straightforward connection setup.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even under high temperature conditions.

Trigger Device Type: SILICON SURGE PROTECTOR

Utilizes silicon technology for efficient surge protection.

Minimum Operating Temperature: -40 °C

Can operate effectively in low temperature environments.

Terminal Finish: Tin (Sn)

Enhances conductivity and corrosion resistance for reliable connections.

Maximum Breakdown Voltage: 77 V

Provides high voltage protection to safeguard connected devices.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Technical Specifications

Silicon Surge Protectors NTVB058NSB-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

77 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB058NSB-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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