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NTVB270SC-L

Onsemi

NTVB270SC-L by Onsemi

NTVB270SC-L by Onsemi is a silicon surge protector with a max breakdown voltage of 365V. It operates in temperatures ranging from -40 °C to 150°C, making it suitable for various applications requiring protection against surges. This single configuration device comes in a small outline package shape and features surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,464 parts In-Stock

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Digiode

USA . 592 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 5,544 parts In-Stock

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SupplyDigital Components

Austria . 3,801 parts In-Stock

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Corphita

USA . 959 parts In-Stock

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Problanco Electronics

Mexico . 857 parts In-Stock

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TANS Electronics

Latvia . 740 parts In-Stock

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the NTVB270SC-L by Onsemi. Crafted with superior quality and precision, this Silicon Surge Protector offers unrivaled defense against voltage spikes and surges. Perfect for a variety of applications, this product provides peace of mind by safeguarding your valuable equipment. Trust in Onsemi's reputation for delivering reliable and efficient solutions, and invest in the NTVB270SC-L for unmatched quality and performance. Elevate your electronics' lifespan and ensure uninterrupted operation with this essential device.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and protection against electrical shocks, while the epoxy coating enhances resistance to high temperatures and moisture.

Configuration: SINGLE

Single configuration makes installation and replacement easier, reducing complexity and potential points of failure.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design that fits well within electronic devices, optimizing space usage.

Terminal Form: C BEND

C bend terminal form ensures a secure and stable connection, reducing the risk of disconnection or loose contact.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures compatibility with various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style is ideal for space-constrained applications, ensuring easy integration without sacrificing performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows the surge protector to withstand harsh environmental conditions without performance degradation.

Trigger Device Type: SILICON SURGE PROTECTOR

Silicon surge protector offers reliable protection against voltage surges, ensuring the safety and longevity of connected electronic devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature tolerance enables the surge protector to function reliably in cold environments without risk of failure.

Terminal Finish: Tin (Sn)

Tin terminal finish provides excellent conductivity and corrosion resistance, ensuring a stable and long-lasting connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and compatibility with a range of circuit configurations, enhancing usability.

Maximum Breakdown Voltage: 365 V

High maximum breakdown voltage ensures effective protection against voltage spikes, safeguarding connected equipment from damage.

Technical Specifications

Silicon Surge Protectors NTVB270SC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

365 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

NTVB270SC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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