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NTVB300SA-L

Onsemi

NTVB300SA-L by Onsemi

NTVB300SA-L by Onsemi is a silicon surge protector with a max breakdown voltage of 400V. It has a trigger device type of SILICON SURGE PROTECTOR and operates in temperatures ranging from -40 °C to 150°C. Ideal for applications requiring protection against electrical surges in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,507 parts In-Stock

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Digiode

USA . 1,305 parts In-Stock

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1,305

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 207 parts In-Stock

1+ parts

$99.990

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207

$99.990

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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SupplyDigital Components

Austria . 5,669 parts In-Stock

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5,669

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Kulean Microsystems

USA . 5,309 parts In-Stock

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5,309

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Problanco Electronics

Mexico . 4,718 parts In-Stock

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4,718

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TANS Electronics

Latvia . 1,626 parts In-Stock

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1,626

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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945

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Corphita

USA . 163 parts In-Stock

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Corohmni

South Africa . 63 parts In-Stock

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63

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Overview

Power surges are no match for the NTVB300SA-L by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their silicon surge protectors. Ideal for a wide range of applications, this product offers unmatched protection for your valuable electronics. Say goodbye to worries about damage from power fluctuations with the NTVB300SA-L. Trust in Onsemi to deliver peace of mind and superior performance for all your surge protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection against physical damage, making it suitable for various environments.

Configuration: SINGLE

The single configuration simplifies installation and reduces complexity, making it easy to integrate into existing systems.

Surface Mount: YES

The ability to surface mount the surge protector allows for easy and efficient assembly, saving time and labor costs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for compact and space-saving installation, ideal for applications where space is limited.

Terminal Form: C BEND

The C bend terminal form ensures a secure connection and optimal electrical performance, reducing the risk of signal loss or interference.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and allows for easy integration into circuitry or systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact and lightweight design, making it suitable for portable devices or space-constrained applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in a wide range of operating conditions, making it versatile and durable.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector as trigger device provides reliable protection against voltage spikes and surges, safeguarding connected equipment.

Maximum Breakdown Voltage: 400 V

The high maximum breakdown voltage offers superior protection against overvoltage events, ensuring the safety and longevity of connected devices.

Technical Specifications

Silicon Surge Protectors NTVB300SA-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB300SA-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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