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NTVB300SC-L

Onsemi

NTVB300SC-L by Onsemi

NTVB300SC-L by Onsemi is a silicon surge protector with a max breakdown voltage of 400V. It has a trigger device type of SILICON SURGE PROTECTOR and operates b/w -40 °C to 150°C. Ideal for applications requiring protection against electrical surges in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,500 parts In-Stock

1+ parts

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6,500

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Digiode

USA . 1,366 parts In-Stock

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1,366

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,202 parts In-Stock

1+ parts

$10.380

100+ parts

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1,202

$10.380

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Kepictronics

USA . 30,000 parts In-Stock

1+ parts

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30,000

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Problanco Electronics

Mexico . 6,498 parts In-Stock

1+ parts

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6,498

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Kulean Microsystems

USA . 4,435 parts In-Stock

1+ parts

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4,435

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SupplyDigital Components

Austria . 2,942 parts In-Stock

1+ parts

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2,942

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TANS Electronics

Latvia . 2,060 parts In-Stock

1+ parts

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2,060

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Corphita

USA . 1,714 parts In-Stock

1+ parts

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1,714

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UHIMA Technologies

Türkiye . 879 parts In-Stock

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879

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Corohmni

South Africa . 106 parts In-Stock

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106

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Overview

Protect your valuable electronics with the NTVB300SC-L Silicon Surge Protector by Onsemi. Manufactured by a trusted industry leader, this single configuration device offers peace of mind in a compact and durable package. Ideal for a range of applications, this product provides superior protection against power surges and voltage spikes. Say goodbye to unexpected downtime and costly repairs - invest in the quality and reliability of Onsemi's surge protectors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection against external factors, making this surge protector a reliable choice for long-term use.

Configuration: SINGLE

The single configuration simplifies the installation process and reduces the chances of wiring errors, making it a user-friendly option.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and making it suitable for compact designs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and efficient design, making it easy to integrate into various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this surge protector can withstand extreme conditions, ensuring reliable performance in harsh environments.

Trigger Device Type: SILICON SURGE PROTECTOR

The silicon surge protector type offers excellent protection against voltage spikes and surges, safeguarding connected equipment and ensuring the longevity of your devices.

Maximum Breakdown Voltage: 400 V

The high maximum breakdown voltage of 400 volts provides superior protection against power surges, making it ideal for sensitive electronic equipment.

Technical Specifications

Silicon Surge Protectors NTVB300SC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB300SC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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