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NTVB058NSC-L

Onsemi

NTVB058NSC-L by Onsemi

NTVB058NSC-L by Onsemi is a silicon surge protector with a max breakdown voltage of 77V. It has a trigger device type of SILICON SURGE PROTECTOR and operates in temperatures ranging from -40 °C to 150°C. This single configuration device with surface mount capability is ideal for protecting electronic circuits from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,832 parts In-Stock

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8,832

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Digiode

USA . 669 parts In-Stock

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669

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Distributors (Availability)

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AZTECH Wire

Italy . 1,054 parts In-Stock

1+ parts

$20.450

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1,054

$20.450

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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SupplyDigital Components

Austria . 5,829 parts In-Stock

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5,829

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TANS Electronics

Latvia . 3,340 parts In-Stock

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3,340

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Kulean Microsystems

USA . 3,205 parts In-Stock

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3,205

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Problanco Electronics

Mexico . 1,479 parts In-Stock

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1,479

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Corphita

USA . 1,140 parts In-Stock

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1,140

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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969

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Corohmni

South Africa . 494 parts In-Stock

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494

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Overview

Discover the NTVB058NSC-L by Onsemi, a high-quality Silicon Surge Protector designed to safeguard your electronic devices. With Onsemi's reputation for excellence in manufacturing, you can trust in the reliability and durability of this product. Ideal for a range of applications, this surge protector offers peace of mind against power surges, ensuring the longevity of your valuable equipment. Experience the value and benefits of superior protection with the NTVB058NSC-L.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Strong and durable material that provides protection to internal components, ensuring longevity and reliability of the surge protector.

Configuration: SINGLE

Simplified design with a single configuration makes installation and maintenance easier.

Surface Mount: YES

Can be easily mounted on circuit boards or other surfaces, allowing for convenient integration into electronic systems.

Package Shape: RECTANGULAR

Compact shape that can easily fit into tight spaces, making it ideal for various applications.

Terminal Form: C BEND

C bend terminals provide a secure connection and are known for their stability and reliability.

No. of Terminals: 2

Simple design with two terminals that offer easy connectivity and installation.

Package Style (Meter): SMALL OUTLINE

Space-saving design that allows for efficient use of PCB real estate, especially in compact electronic devices.

Maximum Operating Temperature: 150 °C

Withstands high temperatures without compromising performance, ensuring reliable protection even in harsh environments.

Trigger Device Type: SILICON SURGE PROTECTOR

Utilizes silicon surge protection technology for fast response times and effective protection against voltage surges and spikes.

Minimum Operating Temperature: -40 °C

Designed to operate in low temperatures, making it suitable for use in various climates and environments.

Terminal Finish: Tin (Sn)

Tin finish on terminals improves solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal configuration offers redundancy and improves electrical connection reliability.

Maximum Breakdown Voltage: 77 V

High breakdown voltage capacity provides effective protection against electrical surges and spikes.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and component bonding during assembly.

Technical Specifications

Silicon Surge Protectors NTVB058NSC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

77 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB058NSC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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