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NTVB200SA-L

Onsemi

NTVB200SA-L by Onsemi

NTVB200SA-L by Onsemi is a silicon surge protector with a max breakdown voltage of 320V. It operates b/w -40 °C to 150°C, making it suitable for various applications requiring protection against surges. This single configuration device comes in a small outline package ideal for surface mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 377 parts In-Stock

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377

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Vyrian

USA . 303 parts In-Stock

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303

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Distributors (Availability)

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Kulean Microsystems

USA . 8,285 parts In-Stock

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8,285

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TANS Electronics

Latvia . 7,861 parts In-Stock

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7,861

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Problanco Electronics

Mexico . 5,817 parts In-Stock

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5,817

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SupplyDigital Components

Austria . 3,107 parts In-Stock

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3,107

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UHIMA Technologies

Türkiye . 400 parts In-Stock

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400

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Corphita

USA . 261 parts In-Stock

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261

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Corohmni

South Africa . 137 parts In-Stock

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137

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Overview

Looking for reliable surge protection for your electronic devices? Look no further than the NTVB200SA-L by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality silicon surge protectors that guarantee the safety of your valuable equipment. With its small outline package and dual terminal position, this product is perfect for a wide range of applications. Say goodbye to worries about voltage spikes and enjoy peace of mind with the NTVB200SA-L. Get yours today and protect your investments effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the surge protector components, ensuring durability and reliability.

Configuration: SINGLE

Simplifies installation and maintenance, making it convenient for users.

Surface Mount: YES

Allows for easy and secure attachment to circuit boards, saving space and reducing the risk of damage.

Package Shape: RECTANGULAR

Facilitates efficient placement and alignment on circuit boards.

Terminal Form: C BEND

Enables simple and secure connection to the circuit, ensuring proper functioning.

No. of Terminals: 2

Provides the necessary connections for the surge protector to operate effectively.

Package Style (Meter): SMALL OUTLINE

Allows for space-saving and efficient design integration in various applications.

Maximum Operating Temperature: 150 °C

Ensures reliable operation within a wide range of temperature conditions.

Trigger Device Type: SILICON SURGE PROTECTOR

Uses silicon technology for efficient and effective protection against power surges.

Minimum Operating Temperature: -40 °C

Ensures the surge protector can function even in extreme cold environments.

Terminal Finish: Tin (Sn)

Provides corrosion resistance and ensures stable electrical connections.

Terminal Position: DUAL

Facilitates secure attachment and reliable performance of the surge protector.

Maximum Breakdown Voltage: 320 V

Provides a high level of protection against voltage spikes, safeguarding connected equipment.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering processes without compromising performance.

Peak Reflow Temperature °C: 260

Allows for reliable soldering of the surge protector to circuit boards without damage.

Technical Specifications

Silicon Surge Protectors NTVB200SA-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

320 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB200SA-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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