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MMT05B064T3G

Onsemi

MMT05B064T3G by Onsemi

The Onsemi MMT05B064T3G is a single silicon surge protector with a non-repetitive peak on-state current of 32A. It operates b/w -40 °C to 125°C, with a max DC off-state voltage of 58V. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,315 parts In-Stock

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Vyrian

USA . 225 parts In-Stock

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225

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Problanco Electronics

Mexico . 7,903 parts In-Stock

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7,903

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TANS Electronics

Latvia . 7,713 parts In-Stock

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7,713

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Kulean Microsystems

USA . 4,765 parts In-Stock

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Corphita

USA . 1,138 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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939

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SupplyDigital Components

Austria . 289 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Protect your electronic devices with the reliable MMT05B064T3G Silicon Surge Protector by Onsemi. With a maximum breakdown voltage of 77V and a non-repetitive peak on-state current of 32A, this single configuration device is designed to safeguard against power surges and spikes. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this UL recognized Thyristor Surge Protector offers peace of mind and protection for your valuable assets. Trust Onsemi's reputation for quality and innovation to keep your devices safe and operating at their best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the internal components of the surge protector.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, making it an efficient choice for use.

Non Repetitive Peak On-state Current: 32 A

With a high peak on-state current, this surge protector can effectively handle sudden spikes in electrical current, providing reliable protection for connected devices.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the surge protector, making it suitable for various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the surge protector can withstand extreme temperatures, providing consistent protection under different environmental conditions.

Technical Specifications

Silicon Surge Protectors MMT05B064T3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

77 V

Configuration:

Maximum DC Off-state Voltage:

58 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

32 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

MMT05B064T3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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