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MMT05B064T3

Onsemi

MMT05B064T3 by Onsemi

The Onsemi MMT05B064T3 is a silicon surge protector with a non-repetitive peak on-state current of 32A. It features a max DC off-state voltage of 58V and operates b/w -40 °C to 125°C. Ideal for applications requiring protection against surges, it is a UL recognized thyristor surge protector suitable for surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 2,500 parts In-Stock

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2,500

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Vyrian

USA . 1,498 parts In-Stock

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1,498

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Digiode

USA . 458 parts In-Stock

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458

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TANS Electronics

Latvia . 8,206 parts In-Stock

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8,206

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SupplyDigital Components

Austria . 7,989 parts In-Stock

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7,989

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Problanco Electronics

Mexico . 2,918 parts In-Stock

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2,918

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Corphita

USA . 994 parts In-Stock

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994

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Kulean Microsystems

USA . 978 parts In-Stock

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978

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UHIMA Technologies

Türkiye . 287 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the MMT05B064T3 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver reliable performance. This silicon surge protector is designed for single configuration and offers a non-repetitive peak on-state current of 32 A, making it ideal for a wide range of applications. With its compact design and UL recognized reference standard, this device provides peace of mind by safeguarding your equipment against power surges. Trust Onsemi's expertise to keep your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and reliability of the surge protector.

Configuration: SINGLE

The single configuration makes it easy to install and use this surge protector in various applications.

Non Repetitive Peak On-state Current: 32 A

The high non repetitive peak on-state current rating of 32A allows the surge protector to handle high power surges effectively.

Surface Mount: YES

Being surface mountable, this surge protector can be easily integrated into circuit boards or other devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this surge protector can withstand elevated temperatures without compromising its performance.

Technical Specifications

Silicon Surge Protectors MMT05B064T3 attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

77 V

Configuration:

Maximum DC Off-state Voltage:

58 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

32 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

MMT05B064T3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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