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MMT05B350T3G

Onsemi

MMT05B350T3G by Onsemi

The Onsemi MMT05B350T3G is a silicon surge protector with a non-repetitive peak on-state current of 32A. It features a max DC off-state voltage of 300V and operates b/w -40 °C to 125°C. Ideal for protecting electronic devices from power surges in various applications.

Median Price

$0.524

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 19,944 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

19,944

-

$0.515

$0.428

$0.381

Verical

USA . 14,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.534

10k+ parts

$0.476

14,975

-

-

$0.534

$0.476

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,773 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

1,773

$0.401

-

-

-

Vyrian

USA . 7,356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,356

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,923 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

-

10k+ parts

-

1,923

$0.380

-

-

-

Corohmni

South Africa . 327 parts In-Stock

1+ parts

$0.422

100+ parts

-

1k+ parts

-

10k+ parts

-

327

$0.422

-

-

-

AZTECH Wire

Italy . 511 parts In-Stock

1+ parts

$12.780

100+ parts

-

1k+ parts

-

10k+ parts

-

511

$12.780

-

-

-

Kepictronics

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120,000

-

-

-

-

Continental Prestige Electronics

USA . 19,944 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.364

10k+ parts

-

19,944

-

-

$0.364

-

TANS Electronics

Latvia . 7,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,023

-

-

-

-

SupplyDigital Components

Austria . 6,396 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,396

-

-

-

-

Problanco Electronics

Mexico . 4,121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,121

-

-

-

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Kulean Microsystems

USA . 1,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,018

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

-

-

-

-

UHIMA Technologies

Türkiye . 394 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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394

-

-

-

-

Overview

Protect your electronic devices with the MMT05B350T3G silicon surge protector from Onsemi. Designed for reliability and durability, this single configuration device offers 32A non-repetitive peak on-state current protection. With a trigger device type of thyristor surge protector and UL recognized reference standard, you can trust that your equipment is safe from voltage spikes. Whether you're safeguarding industrial machinery, telecommunications equipment, or consumer electronics, the MMT05B350T3G provides peace of mind and ensures uninterrupted operation. Experience the quality and assurance that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the surge protector long-lasting and reliable.

Non Repetitive Peak On-state Current: 32 A

High on-state current capacity allows the surge protector to handle large surges effectively, protecting connected devices.

Surface Mount: YES

Surface mount capability makes installation easy and convenient, saving time and effort.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this surge protector can withstand heat and continue to function effectively in various environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protector technology ensures fast response to surges, providing quick protection to connected equipment.

Maximum Breakdown Voltage: 400 V

High breakdown voltage ensures that the surge protector can handle large voltage spikes without failing, offering reliable protection.

Technical Specifications

Silicon Surge Protectors MMT05B350T3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

400 V

Configuration:

Maximum DC Off-state Voltage:

300 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

32 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Trigger Device Type:

Trade Compliance

MMT05B350T3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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