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TISP7350H3SL

Texas Instruments

TISP7350H3SL by Texas Instruments

TISP7350H3SL by Texas Instruments is a 3-element surge protector with 60A peak current. It features a plastic/epoxy body, -40 to 150°C operating temp, and 350V breakdown voltage. Ideal for protecting circuits from surges in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,643 parts In-Stock

1+ parts

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7,643

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Digiode

USA . 2,428 parts In-Stock

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2,428

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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One Stop Electronics

USA . 1,108 parts In-Stock

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$4.100

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1,108

$4.100

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Parana Technologies

USA . 1,296 parts In-Stock

1+ parts

$4.414

100+ parts

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$4.836

10k+ parts

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1,296

$4.414

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$4.836

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DigiPath Technology Company

USA . 1,619 parts In-Stock

1+ parts

$4.861

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1,619

$4.861

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ChromeModa Solutions

Germany . 5,404 parts In-Stock

1+ parts

$4.960

100+ parts

$4.067

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5,404

$4.960

$4.067

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IDEA Electronic Components Group

UK . 1,081 parts In-Stock

1+ parts

$4.960

100+ parts

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$4.464

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1,081

$4.960

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$4.464

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AZTECH Wire

Italy . 508 parts In-Stock

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$16.071

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508

$16.071

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Corphita

USA . 3,076 parts In-Stock

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3,076

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Kepictronics

USA . 1,000 parts In-Stock

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Overview

Upgrade your surge protection with the TISP7350H3SL by Texas Instruments. Manufactured with quality and precision, this silicon surge protector offers reliable protection against power surges for a variety of applications. Whether you're safeguarding your home electronics or industrial equipment, this product provides peace of mind with its superior performance and durability. Trust Texas Instruments to deliver innovative solutions that prioritize your safety and security. Choose the TISP7350H3SL for unbeatable value and unmatched protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection, making it suitable for harsh environments.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements ensures efficient surge protection and distribution of current.

Non Repetitive Peak On-state Current: 60 A

With a high non repetitive peak on-state current of 60 A, this surge protector can handle sudden high-energy surges effectively.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and placement in various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers secure connections and easy installation on circuit boards.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance even in challenging heat conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type provides fast response time and effective protection against voltage spikes.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this surge protector meets the safety and performance standards set by Underwriters Laboratories.

Technical Specifications

Silicon Surge Protectors TISP7350H3SL attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

350 V

Maximum Holding Current:

600 mA

JESD-30 Code:

R-PSIP-T3

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

3

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP7350H3SL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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