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MMT10B310T3

Onsemi

MMT10B310T3 by Onsemi

The Onsemi MMT10B310T3 is a single silicon surge protector with 270V DC off-state voltage and 175 °C max operating temp. It features a thyristor surge protector configuration, suitable for UL-recognized applications requiring protection against voltage spikes in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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R&J Components

USA . 5,000 parts In-Stock

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Prism Electronics

USA . 2,923 parts In-Stock

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Digiode

USA . 1,798 parts In-Stock

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Vyrian

USA . 1,242 parts In-Stock

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Kepictronics

USA . 61,000 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 8,234 parts In-Stock

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TANS Electronics

Latvia . 6,103 parts In-Stock

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Perfect Parts

USA . 3,274 parts In-Stock

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Kulean Microsystems

USA . 1,868 parts In-Stock

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Corphita

USA . 507 parts In-Stock

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Corohmni

South Africa . 441 parts In-Stock

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UHIMA Technologies

Türkiye . 234 parts In-Stock

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Problanco Electronics

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Overview

Experience peace of mind with the MMT10B310T3 by Onsemi, a top-quality Silicon Surge Protector designed to safeguard your electronics from power surges. With Onsemi's reputation for excellence in manufacturing, you can trust that this product offers unmatched reliability and superior performance. Ideal for a wide range of applications, this surge protector provides value by ensuring the protection of your valuable equipment. Don't compromise on quality - choose Onsemi for peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting protection

Configuration: SINGLE

Simplified setup and installation

Surface Mount: YES

Easy to mount on circuit boards

Package Shape: RECTANGULAR

Saves space and integrates well with other components

Terminal Form: C BEND

Secure connection and stability in usage

No. of Terminals: 2

Straightforward connectivity

Package Style (Meter): SMALL OUTLINE

Compact design for efficient use of space

Maximum DC Off-state Voltage: 270 V

Effective protection against high voltage spikes

Maximum Operating Temperature: 175 °C

Suitable for a range of environmental conditions

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Reliable protection mechanism for surge events

Minimum Operating Temperature: -40 °C

Operational even in low temperature environments

Terminal Finish: Tin/Lead (Sn/Pb)

Corrosion-resistant finish for longevity

Terminal Position: DUAL

Enhanced connectivity options

Maximum Breakdown Voltage: 365 V

High threshold for voltage breakdown

Maximum Time At Peak Reflow Temperature (s): 30

Stress-free assembly process

Peak Reflow Temperature °C: 235

Sufficient heat resistance for reflow operations

Reference Standard: UL RECOGNIZED

Compliance with safety standards for peace of mind

Technical Specifications

Silicon Surge Protectors MMT10B310T3 attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

365 V

Configuration:

Maximum DC Off-state Voltage:

270 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

DIACs

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

MMT10B310T3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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