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MMT10B260T3G

Onsemi

MMT10B260T3G by Onsemi

The Onsemi MMT10B260T3G is a silicon surge protector with a max DC off-state voltage of 200V and max breakdown voltage of 320V. It features a thyristor surge protector configuration, suitable for applications requiring protection against voltage surges. With UL recognition, it operates b/w -40 °C to 125°C, making it ideal for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,361 parts In-Stock

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Digiode

USA . 2,465 parts In-Stock

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2,465

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AZTECH Wire

Italy . 908 parts In-Stock

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$14.130

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908

$14.130

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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CPlus Electronics

USA . 16,500 parts In-Stock

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16,500

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 6,699 parts In-Stock

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6,699

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SupplyDigital Components

Austria . 6,663 parts In-Stock

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Problanco Electronics

Mexico . 5,352 parts In-Stock

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Kulean Microsystems

USA . 3,952 parts In-Stock

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UHIMA Technologies

Türkiye . 825 parts In-Stock

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825

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Corphita

USA . 623 parts In-Stock

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Corohmni

South Africa . 478 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the MMT10B260T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Surge Protectors that guarantee reliability and durability. Ideal for a wide range of applications, this product offers unmatched value and benefits to customers seeking to safeguard their equipment from power surges and voltage fluctuations. Trust Onsemi to provide cutting-edge technology that ensures peace of mind and superior performance for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection against physical damage and helps in ensuring the durability of the surge protector.

Configuration: SINGLE

Single configuration makes installation and maintenance easier, reducing the complexity of the setup.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and time.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard mounting options, making it easier to integrate into existing systems.

Terminal Form: C BEND

C bend terminals ensure a secure and reliable connection, reducing the risk of accidental disconnection.

Terminal Finish: TIN

Tin finish on terminals helps in reducing corrosion and ensures a stable connection for efficient performance.

Maximum Breakdown Voltage: 320 V

Higher breakdown voltage provides better protection against power surges, enhancing the safety and reliability of the connected devices.

Technical Specifications

Silicon Surge Protectors MMT10B260T3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

320 V

Configuration:

Maximum DC Off-state Voltage:

200 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

DIACs

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

MMT10B260T3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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