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TISP4380F3DR

Texas Instruments

TISP4380F3DR by Texas Instruments

TISP4380F3DR by Texas Instruments is a single silicon surge protector with 4A peak current, 380V breakdown voltage, and UL recognition. Ideal for protecting electronic devices from voltage surges in applications like telecommunications equipment and industrial machinery.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,511 parts In-Stock

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Digiode

USA . 1,687 parts In-Stock

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1,687

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Distributors (Availability)

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Parana Technologies

USA . 1,144 parts In-Stock

1+ parts

$3.187

100+ parts

-

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$3.709

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1,144

$3.187

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$3.709

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DigiPath Technology Company

USA . 350 parts In-Stock

1+ parts

$3.509

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350

$3.509

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ChromeModa Solutions

Germany . 5,514 parts In-Stock

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$3.581

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$2.936

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5,514

$3.581

$2.936

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IDEA Electronic Components Group

UK . 563 parts In-Stock

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$3.581

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$3.223

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563

$3.581

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$3.223

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Semicontronic

India . 980 parts In-Stock

1+ parts

$15.100

100+ parts

$14.722

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$14.647

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980

$15.100

$14.722

$14.647

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AZTECH Wire

Italy . 230 parts In-Stock

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$15.815

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230

$15.815

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One Stop Electronics

USA . 928 parts In-Stock

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$20.100

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928

$20.100

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Ampacity Inc.

Singapore . 1,098 parts In-Stock

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$23.100

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$23.100

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Corphita

USA . 2,447 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Overview

Protect your valuable electronic equipment with the TISP4380F3DR by Texas Instruments, a top-quality Silicon Surge Protector designed to safeguard against power surges and spikes. With a reputation for excellence, Texas Instruments delivers reliable products that meet the highest industry standards. Ideal for a variety of applications, this surge protector offers peace of mind and protection for your devices. Invest in the TISP4380F3DR today and enjoy the benefits of superior quality and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection against physical damage.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector.

Non Repetitive Peak On-state Current: 4 A

The high non-repetitive peak on-state current allows for effective surge protection during transient voltage spikes.

Surface Mount: YES

The surface mount capability makes it easy to integrate the surge protector into existing circuitry.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with a wide range of circuit board layouts.

Terminal Form: GULL WING

The gull wing terminal form provides strong solder connections for reliable performance.

No. of Terminals: 8

The surge protector's 8 terminals allow for versatile connectivity options.

Package Style: SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Maximum DC Off-state Voltage: 270 V

The maximum DC off-state voltage rating ensures protection against overvoltage conditions.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range ensures reliable performance even in challenging environmental conditions.

Trigger Device Type: SILICON SURGE PROTECTOR

The silicon surge protector technology offers efficient and fast response to transient voltage surges.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature allows for operation in a wide range of temperature environments.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit board layout and installation.

Maximum Breakdown Voltage: 380 V

The maximum breakdown voltage rating ensures robust protection against voltage spikes.

Reference Standard: UL RECOGNIZED

The UL recognized certification ensures compliance with safety and performance standards.

Technical Specifications

Silicon Surge Protectors TISP4380F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

380 V

Configuration:

Maximum DC Off-state Voltage:

270 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4380F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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