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NP1100GARLG

Onsemi

NP1100GARLG by Onsemi

NP1100GARLG by Onsemi is a single silicon surge protector with 2 wire terminals. It has a max DC off-state voltage of 90V and a max breakdown voltage of 130V. This thyristor surge protector is UL recognized and commonly used for surge protection applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,327 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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685

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Kulean Microsystems

USA . 7,639 parts In-Stock

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Problanco Electronics

Mexico . 3,937 parts In-Stock

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SupplyDigital Components

Austria . 3,601 parts In-Stock

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TANS Electronics

Latvia . 3,476 parts In-Stock

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Corphita

USA . 1,902 parts In-Stock

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Overview

Protect your electronics with the NP1100GARLG Silicon Surge Protector from Onsemi. This high-quality device offers unmatched reliability and performance, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for a variety of applications, this surge protector delivers exceptional value by safeguarding your equipment against power surges and spikes. Trust Onsemi to provide you with the protection you need for peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection against external elements, making this surge protector a reliable choice for long-term use.

Maximum Breakdown Voltage: 130 V

With a high maximum breakdown voltage of 130 V, this surge protector can effectively handle surges and prevent damage to connected devices, providing peace of mind in case of power fluctuations.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector offers reliable and fast response to surges, ensuring quick protection for connected devices and equipment, making it a suitable choice for high-performance surge protection.

Maximum Holding Current: 150000 mA

The surge protector's high maximum holding current of 150000 mA enables it to withstand and dissipate large amounts of energy during a surge, offering robust protection for sensitive electronics and devices.

Reference Standard: UL RECOGNIZED

Being UL Recognized means that this surge protector meets high safety and performance standards set by Underwriters Laboratories, ensuring a reliable and quality product that you can trust to protect your valuable electronics.

Technical Specifications

Silicon Surge Protectors NP1100GARLG attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Case Connection:

Configuration:

Maximum DC Off-state Voltage:

90 V

Maximum Holding Current:

150000 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

NP1100GARLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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