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TISP1082F3DR

Texas Instruments

TISP1082F3DR by Texas Instruments

TISP1082F3DR by Texas Instruments is a Silicon Surge Protector with 4A Non Repetitive Peak On-state Current, 66V Max DC Off-state Voltage, and 82V Max Breakdown Voltage. It is used for surge protection in electronic circuits, featuring a series connected configuration with gull wing terminals and UL recognition.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Resion

USA . 14,258 parts In-Stock

1+ parts

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,000 parts In-Stock

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5,000

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Vyrian

USA . 4,276 parts In-Stock

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4,276

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Legend Electronics Inc.

USA . 2,500 parts In-Stock

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2,500

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Digiode

USA . 1,078 parts In-Stock

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1,078

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Distributors (Availability)

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Parana Technologies

USA . 1,013 parts In-Stock

1+ parts

$2.686

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$3.170

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1,013

$2.686

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$3.170

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IDEA Electronic Components Group

UK . 1,844 parts In-Stock

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$3.018

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$2.716

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1,844

$3.018

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$2.716

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ChromeModa Solutions

Germany . 991 parts In-Stock

1+ parts

$3.018

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$2.475

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991

$3.018

$2.475

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AZTECH Wire

Italy . 194 parts In-Stock

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$16.043

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194

$16.043

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One Stop Electronics

USA . 385 parts In-Stock

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$23.100

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385

$23.100

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Corphita

USA . 4,239 parts In-Stock

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4,239

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DigiPath Technology Company

USA . 151 parts In-Stock

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$2.721

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151

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$2.721

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Overview

Safeguard your electronic devices with the TISP1082F3DR by Texas Instruments, a top-of-the-line Silicon Surge Protector designed to provide ultimate protection against voltage spikes. Manufactured by industry leader Texas Instruments, this device offers peace of mind and reliability in a compact, surface mount package. Whether you're looking to protect sensitive equipment in industrial applications or ensure the longevity of your home electronics, the TISP1082F3DR is the perfect solution. Trust Texas Instruments for quality, trust the TISP1082F3DR for unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the surge protector, ensuring long-lasting performance.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements offers enhanced surge protection capabilities.

Non Repetitive Peak On-state Current: 4 A

Can handle high peak currents during surge events, effectively protecting connected equipment.

Surface Mount: YES

Easy to install on circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Compact design that fits well in various electronic devices or systems.

Terminal Form: GULL WING

Ensures reliable electrical connections with the circuit board for efficient surge protection.

Maximum DC Off-state Voltage: 66 V

Can handle high voltage levels to provide effective protection against surges.

Maximum Operating Temperature: 70 °C

Can operate in relatively high temperature environments without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizes advanced thyristor technology for quick response to surge events, enhancing protection capabilities.

Minimum Operating Temperature: 0 °C

Can operate in low temperature conditions without any issues, providing year-round surge protection.

Maximum Breakdown Voltage: 82 V

Provides a safety margin above the maximum operating voltage, ensuring reliable surge protection.

Reference Standard: UL RECOGNIZED

Certified to meet industry standards for safety and performance, giving peace of mind to users.

Technical Specifications

Silicon Surge Protectors TISP1082F3DR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

82 V

Maximum DC Off-state Voltage:

66 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP1082F3DR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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