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NP1100SAMCT3G

Onsemi

NP1100SAMCT3G by Onsemi

NP1100SAMCT3G by Onsemi is a silicon surge protector with a non-repetitive peak on-state current of 20A. It features a max DC off-state voltage of 90V and operates b/w -55 °C to 150°C. Ideal for applications requiring protection against surges in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,380 parts In-Stock

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2,380

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Digiode

USA . 1,659 parts In-Stock

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1,659

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 8,246 parts In-Stock

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8,246

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Kulean Microsystems

USA . 6,237 parts In-Stock

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6,237

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TANS Electronics

Latvia . 5,031 parts In-Stock

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5,031

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Problanco Electronics

Mexico . 3,315 parts In-Stock

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3,315

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Corphita

USA . 1,594 parts In-Stock

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1,594

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UHIMA Technologies

Türkiye . 799 parts In-Stock

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799

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Corohmni

South Africa . 395 parts In-Stock

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395

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Overview

Protect your electronics with the NP1100SAMCT3G by Onsemi, a high-quality Silicon Surge Protector designed to safeguard your devices from voltage spikes and surges. Manufactured by Onsemi, a trusted name in the industry, this single configuration device offers reliability and peace of mind. Ideal for a variety of applications, this thyristor surge protector is UL recognized and can handle up to 20A of non-repetitive peak on-state current. Ensure the long-lasting protection of your valuable equipment with the NP1100SAMCT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this surge protector lightweight and durable, ideal for various applications.

Configuration: SINGLE

The single configuration simplifies the installation process and ensures easy setup for users.

Non Repetitive Peak On-state Current: 20 A

With a high non-repetitive peak on-state current of 20 A, this surge protector can handle sudden surges efficiently, protecting connected devices effectively.

Surface Mount: YES

The surface mount feature allows for easy and convenient mounting, saving space and enabling flexible installation options.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, making it suitable for applications where space is limited.

Maximum DC Off-state Voltage: 90 V

The maximum DC off-state voltage of 90 V ensures effective protection against voltage spikes and surges within the specified range.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55 °C ensures reliable performance even in harsh environmental conditions.

Maximum Breakdown Voltage: 130 V

The high maximum breakdown voltage of 130 V provides reliable protection against overvoltage situations, safeguarding connected equipment.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of a thyristor surge protector as the trigger device ensures fast response times and efficient protection against electrical surges.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that this surge protector meets strict quality and safety standards, providing peace of mind to users.

Technical Specifications

Silicon Surge Protectors NP1100SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Configuration:

Maximum DC Off-state Voltage:

90 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP1100SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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