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TISP2125F3D

Texas Instruments

TISP2125F3D by Texas Instruments

TISP2125F3D by Texas Instruments is a silicon surge protector with 3 delta-connected elements. It has a non-repetitive peak on-state current of 4A and max breakdown voltage of 125V. Ideal for protecting electronic circuits from voltage surges, it features a small outline package style and is UL recognized.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,804 parts In-Stock

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Bristol Electronics

USA . 1,731 parts In-Stock

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Atlantic Semiconductor

USA . 1,731 parts In-Stock

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Digiode

USA . 245 parts In-Stock

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Parana Technologies

USA . 855 parts In-Stock

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$3.106

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$3.625

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ChromeModa Solutions

Germany . 2,071 parts In-Stock

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$3.490

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$2.862

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$3.490

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IDEA Electronic Components Group

UK . 1,220 parts In-Stock

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$3.490

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$3.141

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$3.490

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AZTECH Wire

Italy . 347 parts In-Stock

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$5.609

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One Stop Electronics

USA . 764 parts In-Stock

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$16.100

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DigiPath Technology Company

USA . 1,245 parts In-Stock

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$3.147

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Corphita

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Assy Fe

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Overview

Upgrade your electronic devices with the TISP2125F3D by Texas Instruments, a top-of-the-line Silicon Surge Protector. Manufactured by industry leader Texas Instruments, this product offers unparalleled quality and reliability. Ideal for protecting sensitive circuits from voltage spikes, this surge protector features a compact design with 3 elements in a delta configuration. With a maximum breakdown voltage of 125V and UL recognition, you can trust that your electronics are safe from power surges. Invest in the TISP2125F3D for peace of mind and superior protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the surge protector lightweight and durable, suitable for a wide range of applications.

Configuration: DELTA CONNECTED, 3 ELEMENTS

The delta connected configuration with 3 elements provides efficient surge protection capabilities, ensuring reliable performance.

Non Repetitive Peak On-state Current: 4 A

With a high non repetitive peak on-state current of 4A, this surge protector can effectively handle sudden surge currents, protecting connected devices.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the surge protector on circuit boards or other electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to fit and integrate the surge protector into various electronic systems or devices.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, enhancing the overall performance and durability of the surge protector.

Maximum DC Off-state Voltage: 100 V

With a maximum DC off-state voltage of 100V, this surge protector can effectively protect devices from overvoltage situations, ensuring their longevity.

Trigger Device Type: SILICON SURGE PROTECTOR

The use of silicon surge protector technology ensures rapid response to surge events, providing immediate protection to connected devices.

Maximum Breakdown Voltage: 125 V

The high maximum breakdown voltage of 125V offers an additional layer of protection, safeguarding devices from voltage spikes or surges.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that the surge protector meets stringent quality and safety standards, giving users confidence in its reliability and performance.

Technical Specifications

Silicon Surge Protectors TISP2125F3D attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

125 V

Maximum DC Off-state Voltage:

100 V

JESD-30 Code:

R-PDSO-G8

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

3

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP2125F3D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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