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TISP5150H3BJR

Texas Instruments

TISP5150H3BJR by Texas Instruments

TISP5150H3BJR by Texas Instruments is a single silicon surge protector with 60A non-repetitive peak on-state current. It features a rectangular package shape, C bend terminal form, and operates b/w -40°C to 150°C. Ideal for applications requiring protection against voltage surges, it is a UL recognized thyristor surge protector suitable for surface mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,084 parts In-Stock

1+ parts

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7,084

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Digiode

USA . 3,063 parts In-Stock

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3,063

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 537 parts In-Stock

1+ parts

$2.595

100+ parts

-

1k+ parts

$3.085

10k+ parts

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537

$2.595

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$3.085

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DigiPath Technology Company

USA . 77 parts In-Stock

1+ parts

$2.858

100+ parts

-

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77

$2.858

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ChromeModa Solutions

Germany . 6,202 parts In-Stock

1+ parts

$2.916

100+ parts

$2.391

1k+ parts

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6,202

$2.916

$2.391

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IDEA Electronic Components Group

UK . 422 parts In-Stock

1+ parts

$2.916

100+ parts

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$2.624

10k+ parts

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422

$2.916

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$2.624

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One Stop Electronics

USA . 1,226 parts In-Stock

1+ parts

$3.100

100+ parts

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1,226

$3.100

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AZTECH Wire

Italy . 689 parts In-Stock

1+ parts

$6.693

100+ parts

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689

$6.693

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Corphita

USA . 4,194 parts In-Stock

1+ parts

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4,194

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Overview

Protect your electronics with the TISP5150H3BJR by Texas Instruments, a high-quality silicon surge protector designed to safeguard your devices from unexpected power surges. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this single configuration device offers reliable protection in a compact package. Ideal for a wide range of applications, this thyristor surge protector ensures peace of mind by providing maximum breakdown voltage and non-repetitive peak on-state current capabilities. Invest in the TISP5150H3BJR today and enjoy the benefits of superior surge protection for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the surge protector, making it suitable for various applications and environments.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, making it user-friendly and ideal for individual use.

Non Repetitive Peak On-state Current: 60 A

With a high non-repetitive peak on-state current of 60 A, this surge protector can effectively handle surges and protect connected devices from damage.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the surge protector on circuit boards or other surfaces, saving space and improving accessibility.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design that can easily fit into tight spaces or crowded electronic setups, enhancing versatility and practicality.

Terminal Form: C BEND

The C bend terminal form ensures a secure and stable connection between the surge protector and external devices, reducing the risk of disconnection or signal loss.

No. of Terminals: 2

Having two terminals enables simple and straightforward wiring of the surge protector, facilitating installation and ensuring reliable electrical connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the overall footprint of the surge protector, making it ideal for space-constrained applications without compromising on performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this surge protector is suitable for use in high-temperature environments or under intense conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector is known for its rapid response and high surge handling capacity, providing reliable protection against transient voltage spikes and surges.

Terminal Position: DUAL

The dual terminal position offers flexibility in wiring configurations and allows for versatile installation options, accommodating a variety of system requirements.

Maximum Holding Current: 600 mA

With a maximum holding current of 600 mA, this surge protector can maintain sufficient protection for connected devices without compromising on performance or safety.

Maximum Breakdown Voltage: 150 V

The maximum breakdown voltage of 150 V ensures reliable protection against voltage spikes or overloads, safeguarding electronic equipment from potential damage or failure.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that this surge protector meets stringent safety and performance standards, providing assurance of quality and compliance with industry regulations.

Technical Specifications

Silicon Surge Protectors TISP5150H3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

150 V

Configuration:

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Breakover Diodes

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP5150H3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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