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THBT200S

STMicroelectronics

THBT200S by STMicroelectronics

THBT200S by STMicroelectronics is a silicon surge protector designed for robust applications. It features a non-repetitive peak on-state current of 30 A, a repetitive peak reverse voltage of 200 V, and operates b/w -40 °C to 150°C. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

$2.780

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 30 parts In-Stock

1+ parts

$2.780

100+ parts

-

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30

$2.780

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ECAB

Sweden . 25,435 parts In-Stock

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25,435

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Vyrian

USA . 3,833 parts In-Stock

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3,833

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Digiode

USA . 3,540 parts In-Stock

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3,540

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A2Z Electronics, Inc.

USA . 3,198 parts In-Stock

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3,198

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Anansix

USA . 2,743 parts In-Stock

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2,743

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LWI Electronics Inc

India . 1,079 parts In-Stock

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1,079

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EMSNET

USA . 937 parts In-Stock

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937

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ComSIT Distribution GmbH

Germany . 891 parts In-Stock

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891

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Sunrise Surplus Inc.

USA . 612 parts In-Stock

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612

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Bristol Electronics

USA . 48 parts In-Stock

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48

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Atlantic Semiconductor

USA . 48 parts In-Stock

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48

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,858 parts In-Stock

1+ parts

$3.062

100+ parts

-

1k+ parts

$2.756

10k+ parts

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1,858

$3.062

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$2.756

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MKK Technologies

India . 49 parts In-Stock

1+ parts

$5.757

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49

$5.757

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DigiPath Technology Company

USA . 49 parts In-Stock

1+ parts

$5.757

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49

$5.757

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A-Z Elektronik GmbH

Germany . 5,144 parts In-Stock

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5,144

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 4,836 parts In-Stock

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4,836

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Parana Technologies

USA . 2,135 parts In-Stock

1+ parts

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$3.661

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2,135

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$3.661

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Assy Fe

Spain . 150 parts In-Stock

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150

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Kepictronics

USA . 139 parts In-Stock

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139

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Overview

Elevate your circuit protection with the THBT200S from STMicroelectronics, a trusted name in quality electronics. This silicon surge protector ensures robust defense against voltage spikes, enhancing the longevity and reliability of your devices. Ideal for various applications, its compact design and superior performance make it a smart choice for engineers seeking efficiency and durability. Choose THBT200S for peace of mind and dependable protection in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material enhances the longevity and reliability of the silicon surge protector, ensuring it can withstand various environmental conditions.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for effective surge suppression and can handle varying voltage levels, making it suitable for diverse applications.

Non Repetitive Peak On-state Current: 30 A

A high on-state current capacity ensures that the device can handle brief overcurrents without failure, providing robust protection against surges.

Package Shape: RECTANGULAR

The rectangular shape is designed for efficient space utilization, facilitating easy integration into various electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting allows for secure and stable connections, making the product ideal for applications requiring mechanical strength.

No. of Elements: 2

With two elements, this surge protector provides enhanced performance and redundancy, ensuring greater reliability in surge protection.

Repetitive Peak Reverse Voltage: 200 V

This voltage rating ensures the component can handle repeated voltage spikes without degradation, making it suitable for demanding applications.

No. of Terminals: 3

Three terminals facilitate versatile circuit configurations, allowing for a variety of setup configurations to meet different requirements.

Package Style (Meter): IN-LINE

The in-line package style simplifies the assembly process and can easily be incorporated into a wide range of circuit designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this protector to function effectively in high-temperature environments, enhancing its reliability.

Trigger Device Type: SILICON SURGE PROTECTOR

Being a silicon surge protector, it offers rapid response times to surge events, providing quick and effective protection.

Minimum Operating Temperature: -40 °C

This low minimum operating temperature ensures functionality in extreme cold conditions, making the device versatile for various climates.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability and resistance to corrosion, improving the reliability of connections over time.

Terminal Position: SINGLE

A single terminal position simplifies connection and integration into electronic circuits, streamlining installation.

Maximum Holding Current: 150 mA

This specification indicates a strong capacity to maintain protection under varying current loads without tripping, increasing system stability.

Maximum Breakdown Voltage: 290 V

The high breakdown voltage allows for protection against voltage spikes well above standard operating levels, safeguarding sensitive components.

Technical Specifications

Silicon Surge Protectors THBT200S attributes and parameters. Explore more Silicon Surge Protectors devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

290 V

Maximum Holding Current:

150 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

THBT200S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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