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TISP4180H3BJR

Texas Instruments

TISP4180H3BJR by Texas Instruments

TISP4180H3BJR by Texas Instruments is a single silicon surge protector with 60A peak current, 145V DC voltage, and 150°C max temp. Ideal for protecting circuits from surges in applications like power supplies and telecommunications due to its thyristor surge protection design.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,947 parts In-Stock

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4,947

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Digiode

USA . 4,170 parts In-Stock

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4,170

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ComSIT Distribution GmbH

Germany . 2,750 parts In-Stock

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2,750

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ComSIT USA

USA . 2,750 parts In-Stock

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2,750

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,640 parts In-Stock

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2,640

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Electronics Depot

USA . 73 parts In-Stock

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73

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Pegasus Components GmbH

Germany . 50 parts In-Stock

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50

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Distributors (Availability)

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One Stop Electronics

USA . 1,540 parts In-Stock

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$0.100

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1,540

$0.100

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Parana Technologies

USA . 1,239 parts In-Stock

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$3.695

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$4.198

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1,239

$3.695

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$4.198

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DigiPath Technology Company

USA . 352 parts In-Stock

1+ parts

$4.069

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352

$4.069

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ChromeModa Solutions

Germany . 6,816 parts In-Stock

1+ parts

$4.152

100+ parts

$3.405

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6,816

$4.152

$3.405

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IDEA Electronic Components Group

UK . 1,799 parts In-Stock

1+ parts

$4.152

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$3.737

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1,799

$4.152

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$3.737

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AZTECH Wire

Italy . 617 parts In-Stock

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$17.408

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617

$17.408

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Component Stockers USA

USA . 501 parts In-Stock

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$99.990

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501

$99.990

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Perfect Parts

USA . 52,082 parts In-Stock

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52,082

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 738 parts In-Stock

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738

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Overview

Protect your valuable electronic devices with the TISP4180H3BJR Silicon Surge Protector from Texas Instruments. Manufactured by a trusted industry leader, this single configuration device offers a reliable solution to safeguard against power surges. Ideal for a range of applications, this compact rectangular device is designed for easy surface mount installation. With a maximum breakdown voltage of 180V and UL recognized reference standard, the TISP4180H3BJR provides peace of mind while ensuring the longevity of your electronics. Choose quality, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the surge protector, making it suitable for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and maintenance of the surge protector, making it user-friendly.

Non Repetitive Peak On-state Current: 60 A

With a high non repetitive peak on-state current of 60 A, this surge protector can handle high levels of transient surges effectively.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the surge protector on circuit boards or devices.

Package Shape: RECTANGULAR

The rectangular package shape makes it compact and space-efficient, ideal for installations where space is limited.

Terminal Form: C BEND

The C bend terminal form ensures secure connectivity and stability, preventing any loose connections that could compromise the surge protector's performance.

No. of Terminals: 2

With 2 terminals, this surge protector can be easily connected in a circuit, enhancing its functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the surge protector lightweight and easy to integrate into various electronic devices.

Maximum DC Off-state Voltage: 145 V

The maximum DC off-state voltage of 145 V provides reliable protection against voltage spikes, safeguarding connected equipment.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this surge protector can withstand harsh environmental conditions without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizing thyristor surge protection technology ensures rapid response to surges, effectively diverting excess current away from sensitive equipment.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this surge protector to perform reliably even in cold environments.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in installation and connection, accommodating different circuit layouts.

Maximum Holding Current: 600 mA

The high maximum holding current of 600 mA ensures the surge protector can handle continuous overvoltage conditions without triggering unnecessary protection shutdowns.

Maximum Breakdown Voltage: 180 V

The maximum breakdown voltage of 180 V offers enhanced protection against voltage spikes, safeguarding connected equipment from damage.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates compliance with safety and performance standards, assuring users of the surge protector's quality and reliability.

Technical Specifications

Silicon Surge Protectors TISP4180H3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

180 V

Configuration:

Maximum DC Off-state Voltage:

145 V

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4180H3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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