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NTVB270SB-L

Onsemi

NTVB270SB-L by Onsemi

NTVB270SB-L by Onsemi is a silicon surge protector with a max breakdown voltage of 365V. It operates b/w -40 °C to 150°C, making it suitable for various applications requiring protection against surges. With a surface-mount configuration and dual terminals, it offers reliable performance in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,232 parts In-Stock

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Digiode

USA . 1,161 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 792 parts In-Stock

1+ parts

$99.990

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792

$99.990

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Kepictronics

USA . 30,000 parts In-Stock

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TANS Electronics

Latvia . 6,112 parts In-Stock

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Kulean Microsystems

USA . 5,561 parts In-Stock

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Problanco Electronics

Mexico . 3,614 parts In-Stock

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Corphita

USA . 1,767 parts In-Stock

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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755

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Corohmni

South Africa . 436 parts In-Stock

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SupplyDigital Components

Austria . 18 parts In-Stock

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Overview

Upgrade your electronic devices with the NTVB270SB-L Silicon Surge Protector by Onsemi. Manufactured by a trusted industry leader, this single configuration protector offers reliable protection for your valuable equipment. Ideal for a wide range of applications, this product ensures peace of mind against harmful power surges. With a compact design and high-quality materials, the NTVB270SB-L provides maximum protection without sacrificing performance. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection for the surge protector, ensuring a longer lifespan.

Configuration: SINGLE

Single configuration makes it easy to install and simple to use.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards or other electronic devices.

Package Shape: RECTANGULAR

Rectangular shape offers versatility in placement and easy mounting options.

Terminal Form: C BEND

C bend terminal form provides a secure connection and reduces the risk of disconnection.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and improves efficiency.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design in electronic devices.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability even in harsh environmental conditions.

Trigger Device Type: SILICON SURGE PROTECTOR

Silicon surge protector offers excellent overvoltage protection for connected devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in a wide range of environments without performance issues.

Terminal Finish: Tin (Sn)

Tin terminal finish provides corrosion resistance and ensures a reliable connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and connection options.

Maximum Breakdown Voltage: 365 V

High maximum breakdown voltage protects connected devices from excessive voltage levels.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature reduces the risk of damage during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and connection during assembly.

Technical Specifications

Silicon Surge Protectors NTVB270SB-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

365 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB270SB-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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