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NTVB200SC-L

Onsemi

NTVB200SC-L by Onsemi

NTVB200SC-L by Onsemi is a silicon surge protector with a max breakdown voltage of 320V. It operates b/w -40 °C to 150°C, making it suitable for various applications requiring protection against surges. With a surface-mount configuration and dual terminals, it offers reliable performance in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,217 parts In-Stock

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Vyrian

USA . 2,093 parts In-Stock

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2,093

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 520 parts In-Stock

1+ parts

$99.990

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520

$99.990

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Problanco Electronics

Mexico . 8,221 parts In-Stock

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SupplyDigital Components

Austria . 2,872 parts In-Stock

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Corphita

USA . 1,448 parts In-Stock

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TANS Electronics

Latvia . 266 parts In-Stock

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Corohmni

South Africa . 245 parts In-Stock

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Kulean Microsystems

USA . 238 parts In-Stock

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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145

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Overview

Experience peace of mind with the NTVB200SC-L Silicon Surge Protector by Onsemi, a trusted manufacturer known for its high-quality products. This single configuration device offers reliable protection against power surges, ensuring the safety of your valuable electronics and equipment. Whether you're looking to safeguard your home appliances or industrial machinery, this compact and durable surge protector is the perfect solution. Trust Onsemi to provide you with the best-in-class surge protection for all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures longevity and protection against external elements, making this surge protector a reliable choice.

Configuration: SINGLE

Single configuration allows for easy installation and use in various applications, making it versatile and cost-effective.

Surface Mount: YES

Surface mount capability offers flexibility in placement and installation, making it suitable for a wide range of devices and systems.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design that saves space and allows for efficient integration into different setups.

Terminal Form: C BEND

C bend terminal form provides secure connection and stability, ensuring reliable performance under different conditions.

No. of Terminals: 2

Having 2 terminals simplifies installation and circuit connection, making it user-friendly and convenient.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers a sleek and compact design that is ideal for space-constrained applications, enhancing overall system aesthetics.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance in demanding environments, making it suitable for industrial and commercial applications.

Trigger Device Type: SILICON SURGE PROTECTOR

Silicon surge protector technology provides reliable protection against voltage spikes and surges, safeguarding electronic equipment and devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for usage in cold environments without compromising performance, ensuring functionality in a wide range of conditions.

Terminal Finish: Tin (Sn)

Tin terminal finish offers good conductivity and corrosion resistance, enhancing the overall reliability and lifespan of the surge protector.

Terminal Position: DUAL

Dual terminal position allows for versatile installation and connection options, increasing compatibility with different systems and setups.

Maximum Breakdown Voltage: 320 V

High maximum breakdown voltage provides superior protection against voltage spikes and surges, ensuring the safety and longevity of connected equipment.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time allows for efficient manufacturing processes and reduces the risk of thermal damage, ensuring product reliability during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables the surge protector to withstand the soldering process without compromising its performance, ensuring a robust and durable product.

Technical Specifications

Silicon Surge Protectors NTVB200SC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

320 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB200SC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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