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NTVB220NSC-L

Onsemi

NTVB220NSC-L by Onsemi

NTVB220NSC-L by Onsemi is a silicon surge protector with a max breakdown voltage of 300V. It has a trigger device type of SILICON SURGE PROTECTOR and operates b/w -40 °C to 150°C. Ideal for applications requiring protection against voltage surges in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,205 parts In-Stock

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6,205

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Digiode

USA . 2,279 parts In-Stock

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2,279

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Distributors (Availability)

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AZTECH Wire

Italy . 368 parts In-Stock

1+ parts

$16.390

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368

$16.390

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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SupplyDigital Components

Austria . 8,089 parts In-Stock

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8,089

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Problanco Electronics

Mexico . 7,691 parts In-Stock

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7,691

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Kulean Microsystems

USA . 1,963 parts In-Stock

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1,963

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Corphita

USA . 357 parts In-Stock

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357

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Corohmni

South Africa . 121 parts In-Stock

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UHIMA Technologies

Türkiye . 105 parts In-Stock

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105

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TANS Electronics

Latvia . 29 parts In-Stock

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Overview

Safeguard your electronics with the NTVB220NSC-L Silicon Surge Protector by Onsemi. Manufactured with the highest quality materials, this single configuration device is designed to protect against voltage spikes, ensuring the longevity of your devices. Perfect for a range of applications, this compact rectangular package offers dual terminal positions and a maximum breakdown voltage of 300V. Trust Onsemi's reputation for reliability and invest in the NTVB220NSC-L for peace of mind and protection for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the surge protector, ensuring a longer lifespan.

Configuration: SINGLE

Simplifies installation and maintenance as only one unit is needed for surge protection.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and improving efficiency.

Package Shape: RECTANGULAR

Optimal shape for fitting into electronics and ensuring compact design.

Terminal Form: C BEND

Facilitates easy connection and ensures a secure fit on the circuit board.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating environments.

Trigger Device Type: SILICON SURGE PROTECTOR

Utilizes silicon technology for efficient surge protection, ensuring safety of connected devices.

Minimum Operating Temperature: -40 °C

Suitable for use in cold environments without compromising performance.

Maximum Breakdown Voltage: 300 V

Provides reliable protection against surges up to 300 volts, safeguarding connected equipment.

Technical Specifications

Silicon Surge Protectors NTVB220NSC-L attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

300 V

Configuration:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NTVB220NSC-L Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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