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NP0900SAMCT3G

Onsemi

NP0900SAMCT3G by Onsemi

NP0900SAMCT3G by Onsemi is a single silicon surge protector with 20A non-repetitive peak on-state current. It has a max DC off-state voltage of 75V and operates b/w -55 to 150 °C. Ideal for applications requiring thyristor surge protection in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,876 parts In-Stock

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Digiode

USA . 72 parts In-Stock

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72

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 399 parts In-Stock

1+ parts

$99.990

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399

$99.990

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Problanco Electronics

Mexico . 6,873 parts In-Stock

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SupplyDigital Components

Austria . 5,018 parts In-Stock

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Kulean Microsystems

USA . 2,775 parts In-Stock

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TANS Electronics

Latvia . 808 parts In-Stock

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Corphita

USA . 598 parts In-Stock

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Corohmni

South Africa . 483 parts In-Stock

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UHIMA Technologies

Türkiye . 462 parts In-Stock

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Overview

Protect your valuable electronics with the NP0900SAMCT3G by Onsemi. As a leading manufacturer of silicon surge protectors, Onsemi ensures top-notch quality and reliability in every product. Ideal for applications where transient voltage spikes pose a threat, this surge protector offers peace of mind by safeguarding your devices from damage. With a non-repetitive peak on-state current of 20A and a maximum DC off-state voltage of 75V, this single configuration device is a must-have for any electronic setup. Trust Onsemi to deliver the protection you need, without compromising on performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the surge protector lightweight and durable, ensuring long-lasting protection for your electronic devices.

Configuration: SINGLE

The single configuration simplifies installation and ensures efficient protection without the need for complex setup.

Non Repetitive Peak On-state Current: 20 A

The high peak on-state current rating of 20A allows the surge protector to effectively handle sudden voltage spikes or surges, protecting connected devices from damage.

Surface Mount: YES

The surface mount capability offers easy and convenient installation on circuit boards or panels, saving space and reducing installation time.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this surge protector can withstand high temperatures, ensuring reliable performance even in challenging environments.

Technical Specifications

Silicon Surge Protectors NP0900SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

98 V

Configuration:

Maximum DC Off-state Voltage:

75 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP0900SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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