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TISP4040H1BJR

Texas Instruments

TISP4040H1BJR by Texas Instruments

TISP4040H1BJR by Texas Instruments is a single silicon surge protector with 50A non-repetitive peak on-state current. It has a max breakdown voltage of 40V and operates b/w -65°C to 150°C. Ideal for protecting electronic circuits from voltage surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,658 parts In-Stock

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4,658

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Digiode

USA . 3,476 parts In-Stock

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3,476

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 470 parts In-Stock

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470

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R&J Components

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Parana Technologies

USA . 1,751 parts In-Stock

1+ parts

$2.278

100+ parts

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$2.777

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1,751

$2.278

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$2.777

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DigiPath Technology Company

USA . 1,068 parts In-Stock

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$2.508

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1,068

$2.508

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ChromeModa Solutions

Germany . 4,494 parts In-Stock

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$2.559

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$2.098

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4,494

$2.559

$2.098

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IDEA Electronic Components Group

UK . 2,104 parts In-Stock

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$2.559

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$2.303

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$2.559

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One Stop Electronics

USA . 271 parts In-Stock

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$9.100

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271

$9.100

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AZTECH Wire

Italy . 828 parts In-Stock

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$13.144

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828

$13.144

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RC Electronics

USA . 70,000 parts In-Stock

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70,000

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Corphita

USA . 3,023 parts In-Stock

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3,023

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the peace of mind that comes with reliable surge protection with the TISP4040H1BJR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and performance in their silicon surge protectors. From safeguarding your sensitive electronics to protecting your valuable equipment, this device offers unmatched reliability and durability. With its compact design and easy installation, this surge protector is the perfect solution for a wide range of applications. Trust Texas Instruments to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and long-lasting.

Configuration: SINGLE

The single configuration simplifies the installation process and reduces the chances of errors or complications.

Non Repetitive Peak On-state Current: 50 A

With a high non-repetitive peak on-state current of 50 A, this surge protector can effectively handle sudden high currents without damage.

Surface Mount: YES

Being surface mountable allows for easy installation on circuit boards and saves space within the device.

Repetitive Peak Reverse Voltage: 25 V

The repetitive peak reverse voltage of 25 V ensures protection against reverse polarity and voltage spikes.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures a secure and stable connection.

Maximum DC Off-state Voltage: 25 V

The maximum DC off-state voltage of 25 V offers reliable protection against overvoltage situations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this surge protector can withstand elevated temperatures without compromising performance.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector design provides fast and effective protection against power surges and spikes.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows for reliable operation even in extreme cold environments.

Maximum Breakdown Voltage: 40 V

The high maximum breakdown voltage of 40 V ensures that the surge protector can handle high voltage spikes effectively.

Technical Specifications

Silicon Surge Protectors TISP4040H1BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

40 V

Configuration:

Maximum DC Off-state Voltage:

25 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

50 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Repetitive Peak Reverse Voltage:

25 V

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4040H1BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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