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NP1500SET3G

Onsemi

NP1500SET3G by Onsemi

NP1500SET3G by Onsemi is a Silicon Surge Protector with THYRISTOR technology. It has a max operating temp of 150 °C, min operating temp of -40°C, and max breakdown voltage of 180V. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,196 parts In-Stock

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Digiode

USA . 791 parts In-Stock

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791

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SupplyDigital Components

Austria . 6,880 parts In-Stock

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6,880

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TANS Electronics

Latvia . 5,176 parts In-Stock

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Kulean Microsystems

USA . 4,443 parts In-Stock

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Problanco Electronics

Mexico . 1,647 parts In-Stock

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Corphita

USA . 1,515 parts In-Stock

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UHIMA Technologies

Türkiye . 632 parts In-Stock

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632

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Corohmni

South Africa . 98 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the NP1500SET3G by Onsemi. Crafted by a trusted manufacturer, this silicon surge protector offers reliable defense against power surges and voltage spikes. Ideal for a variety of applications, this surface mount device ensures optimal performance even in extreme temperatures. Invest in the NP1500SET3G today and enjoy peace of mind knowing your valuable equipment is safeguarded from potential damage. Trust in Onsemi for quality, value, and superior protection.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this surge protector can withstand extreme heat conditions without malfunctioning.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type offers fast response and reliable protection against voltage surges, ensuring the safety of connected devices.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this surge protector can function effectively in cold environments without any issues.

Maximum Holding Current: 150 mA

The high maximum holding current of 150 mA ensures that the surge protector can handle transient currents without failing and providing continuous protection.

Maximum Breakdown Voltage: 180 V

The high maximum breakdown voltage of 180 V ensures that the surge protector can handle high voltage spikes effectively, protecting sensitive electronic devices.

Technical Specifications

Silicon Surge Protectors NP1500SET3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

180 V

Maximum Holding Current:

150 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

NP1500SET3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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