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NP1500SDMCT3G

Onsemi

NP1500SDMCT3G by Onsemi

NP1500SDMCT3G by Onsemi is a silicon surge protector with a non-repetitive peak on-state current of 60A. It features a max DC off-state voltage of 140V and operates b/w -40 °C to 150°C. Ideal for applications requiring protection against surges, it is a surface-mount device with UL recognition.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,607 parts In-Stock

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Vyrian

USA . 629 parts In-Stock

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629

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Kulean Microsystems

USA . 5,990 parts In-Stock

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5,990

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Problanco Electronics

Mexico . 3,383 parts In-Stock

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TANS Electronics

Latvia . 1,560 parts In-Stock

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Corphita

USA . 1,558 parts In-Stock

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1,558

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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SupplyDigital Components

Austria . 85 parts In-Stock

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Overview

Protect your valuable electronic devices with the NP1500SDMCT3G by Onsemi, a top-quality Silicon Surge Protector. Manufactured by Onsemi, a trusted name in the industry, this device offers reliable protection against power surges and voltage spikes. Ideal for a wide range of applications, this surge protector is designed to ensure the safety and longevity of your electronic equipment. Invest in the NP1500SDMCT3G for peace of mind and the assurance that your devices are safeguarded from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable protection for the internal components of the surge protector, ensuring long-term functionality.

Configuration: SINGLE

Simplified design with a single configuration makes installation and usage straightforward.

Non Repetitive Peak On-state Current: 60 A

Capable of handling high surge currents, offering robust protection for connected devices.

Surface Mount: YES

Easily mountable on circuit boards for convenient integration into electronic systems.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space in electronic applications.

Maximum DC Off-state Voltage: 140 V

Provides reliable protection against overvoltage situations up to 140 volts, safeguarding connected devices.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, ensuring optimal performance in various environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, offering versatility in placement and use.

Terminal Finish: TIN

Provides corrosion resistance and facilitates soldering during installation, enhancing overall durability.

Maximum Breakdown Voltage: 180 V

Offers protection up to a breakdown voltage of 180 volts, safeguarding connected equipment against electrical surges.

Technical Specifications

Silicon Surge Protectors NP1500SDMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

180 V

Configuration:

Maximum DC Off-state Voltage:

140 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP1500SDMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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