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NP0720SAMCT3G

Onsemi

NP0720SAMCT3G by Onsemi

NP0720SAMCT3G by Onsemi is a single silicon surge protector with 20A non-repetitive peak on-state current. It operates b/w -55 to 150 °C, has a max breakdown voltage of 88V, and is a surface-mount device ideal for protecting electronic circuits from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,711 parts In-Stock

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Digiode

USA . 1,693 parts In-Stock

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1,693

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Distributors (Availability)

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Component Stockers USA

USA . 702 parts In-Stock

1+ parts

$99.990

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702

$99.990

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Problanco Electronics

Mexico . 5,755 parts In-Stock

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5,755

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Kulean Microsystems

USA . 4,523 parts In-Stock

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Corphita

USA . 1,549 parts In-Stock

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SupplyDigital Components

Austria . 990 parts In-Stock

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990

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TANS Electronics

Latvia . 672 parts In-Stock

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Corohmni

South Africa . 155 parts In-Stock

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Overview

Protect your valuable electronic devices with the NP0720SAMCT3G by Onsemi, a top-of-the-line Silicon Surge Protector. Onsemi is known for its high-quality products, and this surge protector is no exception. With a non-repetitive peak on-state current of 20A and a maximum breakdown voltage of 88V, this device offers unparalleled protection against power surges. Whether you're looking to safeguard your home electronics or industrial equipment, the NP0720SAMCT3G is the reliable solution you need. Trust Onsemi to deliver quality, performance, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring a long lifespan for the surge protector.

Configuration: SINGLE

Simplified design for easy installation and maintenance.

Non Repetitive Peak On-state Current: 20 A

Capable of handling high surge currents to protect electronic devices effectively.

Surface Mount: YES

Allows for convenient mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Compact design for easy integration into existing electrical systems.

Terminal Form: C BEND

Facilitates secure and stable connections for reliable surge protection.

Maximum DC Off-state Voltage: 65 V

Provides sufficient protection against voltage spikes and surges.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Highly responsive and effective in clamping surges to safeguard electronic equipment.

Terminal Finish: TIN

Corrosion-resistant finish for reliable electrical connections.

Maximum Breakdown Voltage: 88 V

Offers a safety margin above the operating voltage to prevent damage to connected devices.

Technical Specifications

Silicon Surge Protectors NP0720SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

88 V

Configuration:

Maximum DC Off-state Voltage:

65 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP0720SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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