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NP0720SET3G

Onsemi

NP0720SET3G by Onsemi

NP0720SET3G by Onsemi is a Silicon Surge Protector with THYRISTOR technology. It has a max operating temp of 150 °C, min operating temp of -40°C, and max breakdown voltage of 88V. Ideal for protecting electronic devices from power surges in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,403 parts In-Stock

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1,403

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Vyrian

USA . 171 parts In-Stock

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171

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Distributors (Availability)

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SupplyDigital Components

Austria . 7,814 parts In-Stock

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7,814

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Kulean Microsystems

USA . 7,439 parts In-Stock

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7,439

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TANS Electronics

Latvia . 1,850 parts In-Stock

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1,850

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Corphita

USA . 978 parts In-Stock

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978

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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525

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Corohmni

South Africa . 479 parts In-Stock

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479

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Problanco Electronics

Mexico . 241 parts In-Stock

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Overview

Experience superior surge protection with the NP0720SET3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality silicon surge protectors that are ideal for a wide range of applications. Safeguard your electronics from power surges and voltage spikes with ease, thanks to the innovative technology behind this product. Trust Onsemi to provide reliable protection for your devices, ensuring peace of mind and longevity. Upgrade to the NP0720SET3G today and enjoy the benefits of advanced surge protection technology.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy installation on circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even in environments with elevated temperatures, increasing the product's durability.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Thyristor surge protectors offer fast response times and low let-through voltages, providing effective protection against transient overvoltage events.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the surge protector to function effectively in cold environments, making it suitable for a wide range of applications.

Maximum Holding Current: 150 mA

The high maximum holding current capability ensures that the surge protector can withstand prolonged overcurrent conditions without failing, enhancing its reliability.

Maximum Breakdown Voltage: 88 V

The high maximum breakdown voltage helps protect connected devices by ensuring that excessive voltages are safely redirected to the ground, preventing damage.

Technical Specifications

Silicon Surge Protectors NP0720SET3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

88 V

Maximum Holding Current:

150 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Trigger Device Type:

Trade Compliance

NP0720SET3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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