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NP0720SDMCT3G

Onsemi

NP0720SDMCT3G by Onsemi

NP0720SDMCT3G by Onsemi is a silicon surge protector with a non-repetitive peak on-state current of 60A. It operates b/w -40 °C to 150°C and has a max DC off-state voltage of 65V. This thyristor surge protector is ideal for applications requiring protection against voltage surges in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 493 parts In-Stock

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Vyrian

USA . 278 parts In-Stock

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TANS Electronics

Latvia . 6,557 parts In-Stock

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SupplyDigital Components

Austria . 4,080 parts In-Stock

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Kulean Microsystems

USA . 3,772 parts In-Stock

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Problanco Electronics

Mexico . 1,919 parts In-Stock

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Corphita

USA . 446 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Corohmni

South Africa . 50 parts In-Stock

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Overview

Safeguard your electronics with the NP0720SDMCT3G by Onsemi, a top-of-the-line Silicon Surge Protector. Manufactured by Onsemi, a trusted industry leader, this single-configured device offers unmatched protection against power surges, ensuring the longevity of your valuable equipment. Ideal for a variety of applications, this compact and efficient surge protector boasts a maximum breakdown voltage of 88V and a non-repetitive peak on-state current of 60A. Invest in peace of mind with the NP0720SDMCT3G and protect your devices from unexpected electrical spikes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the surge protector, ensuring a long lifespan.

Configuration: SINGLE

Single configuration makes the surge protector easy to install and use, simplifying the setup process.

Non Repetitive Peak On-state Current: 60 A

A high peak on-state current of 60A allows the surge protector to handle sudden surges and spikes effectively, providing reliable protection for connected devices.

Surface Mount: YES

Surface mount capability enables easy installation on circuit boards, saving space and streamlining the design of electronic systems.

Package Shape: RECTANGULAR

Rectangular package shape facilitates placement and mounting of the surge protector within electronic devices or systems.

Maximum DC Off-state Voltage: 65 V

With a maximum DC off-state voltage of 65V, the surge protector can effectively protect against voltage spikes and transients within this range.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures the surge protector can withstand elevated temperatures and operate reliably under various environmental conditions.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The use of thyristor surge protector as the trigger device provides fast response to surges, offering effective protection for sensitive electronic equipment.

Maximum Breakdown Voltage: 88 V

A high maximum breakdown voltage of 88V indicates the surge protector's ability to handle overvoltage conditions and protect connected devices from damage.

Technical Specifications

Silicon Surge Protectors NP0720SDMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

88 V

Configuration:

Maximum DC Off-state Voltage:

65 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP0720SDMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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